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Chinese Academy of Sciences Institutional Repositories Grid
Study of self-assembled inas quantum dot structure covered by inxga1-xas(0 <= x <= 0.3) capping layer

文献类型:期刊论文

作者Wang, XD; Liu, HY; Niu, ZC; Feng, SL
刊名Acta physica sinica
出版日期2000-11-01
卷号49期号:11页码:2230-2234
关键词Quantum dots Cap layer Strain-reducing Redshift
ISSN号1000-3290
通讯作者Wang, xd()
英文摘要Inas self-assembled quantum dots(qds) covered by 3-nm-thick inxga1-xas(0 less than or equal tox less than or equal to0.3) capping layer have been grown on gaas(100) substrate. transmission electron microscopy shows that ingaas layer reduces the strain in the inas islands,and atomic force microscopy evidences the deposition of ingaas on the top of inas islands when x = 0.3.the significant redshift of the photoluminescence (pl) peak energy and the reduction of pl linewidth of inas quantum dots covered by ingaas are observed. in addition,ingaas overgrowth layer suppresses the temperature sensitivity of pl peak energy. based on our analysis, the strain-reduction and the size distribution of the inas qds are the main cause of the redshift and temperature insensitivity of the pl respectively.
WOS关键词MU-M ; EMISSION ; INGAAS
WOS研究方向Physics
WOS类目Physics, Multidisciplinary
语种英语
WOS记录号WOS:000165204200022
出版者CHINESE PHYSICAL SOC
URI标识http://www.irgrid.ac.cn/handle/1471x/2428791
专题半导体研究所
通讯作者Wang, XD
作者单位1.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Wang, XD,Liu, HY,Niu, ZC,et al. Study of self-assembled inas quantum dot structure covered by inxga1-xas(0 <= x <= 0.3) capping layer[J]. Acta physica sinica,2000,49(11):2230-2234.
APA Wang, XD,Liu, HY,Niu, ZC,&Feng, SL.(2000).Study of self-assembled inas quantum dot structure covered by inxga1-xas(0 <= x <= 0.3) capping layer.Acta physica sinica,49(11),2230-2234.
MLA Wang, XD,et al."Study of self-assembled inas quantum dot structure covered by inxga1-xas(0 <= x <= 0.3) capping layer".Acta physica sinica 49.11(2000):2230-2234.

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来源:半导体研究所

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