Effect of low-temperature sige interlayer on the growth of relaxed sige
文献类型：期刊论文
| 作者 | Li, DZ; Huang, CJ; Cheng, BW; Wang, HJ; Yu, Z; Zhang, CH; Yu, JZ; Wang, QM |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2000-06-01 |
| 卷号 | 213期号:3-4页码:308-311 |
| 关键词 | Sige Uhv/cvd Rheed Raman scattering |
| ISSN号 | 0022-0248 |
| 通讯作者 | Li, dz() |
| 英文摘要 | A low-temperature si0.8ge0.2 (lt-si0.8ge0.2) interlayer was grown at 500 degrees c to improve the relaxed si0.8ge0.2 surface and reduce the dislocation density in it, which was confirmed by the change of reflective high-energy electron diffraction (rheed) pattern from spotty to streaky and etch pits counts. for the same extent of strain; the threading dislocation density was reduced from 8 x 10(7) cm(-2) in the latter to 2 x 10(6) cm(-2) in the former. (c) 2000 elsevier science b.v. all rights reserved. |
| WOS关键词 | SILICON ; RELAXATION |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000087389800014 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428794 |
| 专题 | 半导体研究所 |
| 通讯作者 | Li, DZ |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, DZ,Huang, CJ,Cheng, BW,et al. Effect of low-temperature sige interlayer on the growth of relaxed sige[J]. Journal of crystal growth,2000,213(3-4):308-311. |
| APA | Li, DZ.,Huang, CJ.,Cheng, BW.,Wang, HJ.,Yu, Z.,...&Wang, QM.(2000).Effect of low-temperature sige interlayer on the growth of relaxed sige.Journal of crystal growth,213(3-4),308-311. |
| MLA | Li, DZ,et al."Effect of low-temperature sige interlayer on the growth of relaxed sige".Journal of crystal growth 213.3-4(2000):308-311. |
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来源：半导体研究所
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