The investigations on semi-insulating gaas by surface photovoltaic spectroscopy
文献类型：期刊论文
| 作者 | Chen, YB; Jiang, DS; Wang, RZ; Zheng, HJ; Sun, BQ |
| 刊名 | Journal of infrared and millimeter waves
 |
| 出版日期 | 2000-02-01 |
| 卷号 | 19期号:1页码:15-18 |
| 关键词 | Surface photovoltaic spectroscopy Si-gaas Nondetructive technique |
| ISSN号 | 1001-9014 |
| 通讯作者 | Chen, yb() |
| 英文摘要 | The surface photovoltage (spv) effect induced by the defect states in semi-insulating (si) gaas was studied. the pv response below the band edge was measured at room temperature with a de optical biasing. the spectra were found to be strongly dependent on the surface recombination and were attributed to formation of the carrier concentration gradient near the surface region, showing that spv is a very sensitive and nondestructive technique for characterizing the surface quality of the si-gaas wafers. |
| WOS关键词 | UNDOPED SEMIINSULATING GAAS |
| WOS研究方向 | Optics |
| WOS类目 | Optics |
| 语种 | 英语 |
| WOS记录号 | WOS:000085676100004 |
| 出版者 | SCIENCE PRESS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428795 |
| 专题 | 半导体研究所 |
| 通讯作者 | Chen, YB |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 2.Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Chen, YB,Jiang, DS,Wang, RZ,et al. The investigations on semi-insulating gaas by surface photovoltaic spectroscopy[J]. Journal of infrared and millimeter waves,2000,19(1):15-18. |
| APA | Chen, YB,Jiang, DS,Wang, RZ,Zheng, HJ,&Sun, BQ.(2000).The investigations on semi-insulating gaas by surface photovoltaic spectroscopy.Journal of infrared and millimeter waves,19(1),15-18. |
| MLA | Chen, YB,et al."The investigations on semi-insulating gaas by surface photovoltaic spectroscopy".Journal of infrared and millimeter waves 19.1(2000):15-18. |
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来源：半导体研究所
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