中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Novel coupled multi-active region high power semiconductor lasers cascaded via tunnel junction

文献类型:期刊论文

作者Lian, P; Yin, T; Gao, G; Zou, DS; Chen, CH; Li, JJ; Shen, GD; Ma, XY; Chen, LH
刊名Acta physica sinica
出版日期2000-12-01
卷号49期号:12页码:2374-2377
关键词Semiconductor lasers High power Mocvd
ISSN号1000-3290
通讯作者Lian, p()
英文摘要A novel semiconductor laser structure is put forward to resolve the major difficulties of high power laser diodes. in this structure, several active regions are cascaded by tunnel junctions to form a large optical cavity and to achieve super high efficiency. this structure can solve the problems of catastrophic optical damage of facet, thermal damage and poor light beam quality effectively. low-pressure metalorganic chemical vapor deposition method is adopted to grow the novel semiconductor laser structures, which are composed of si:gaas/c:gaas tunnel junctions, gaas/ingaas strain quantum well active regions. external differential quantum efficiency as high as 2.2 and light power output of 2.5 w per facet (under 2a drive current) are achieved from an uncoated novel laser device with three active regions.
WOS关键词OPERATION
WOS研究方向Physics
WOS类目Physics, Multidisciplinary
语种英语
WOS记录号WOS:000165849400010
出版者CHINESE PHYSICAL SOC
URI标识http://www.irgrid.ac.cn/handle/1471x/2428802
专题半导体研究所
通讯作者Lian, P
作者单位1.Beijing Polytech Univ, Dept Elect Engn, Beijing 100022, Peoples R China
2.Beijing Optoelect Lab, Beijing 100022, Peoples R China
3.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Lian, P,Yin, T,Gao, G,et al. Novel coupled multi-active region high power semiconductor lasers cascaded via tunnel junction[J]. Acta physica sinica,2000,49(12):2374-2377.
APA Lian, P.,Yin, T.,Gao, G.,Zou, DS.,Chen, CH.,...&Chen, LH.(2000).Novel coupled multi-active region high power semiconductor lasers cascaded via tunnel junction.Acta physica sinica,49(12),2374-2377.
MLA Lian, P,et al."Novel coupled multi-active region high power semiconductor lasers cascaded via tunnel junction".Acta physica sinica 49.12(2000):2374-2377.

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来源:半导体研究所

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