Strain-compensated quantum cascade lasers operating at room temperature
文献类型:期刊论文
| 作者 | Liu, FQ; Ding, D; Xu, B; Zhang, YZ; Zhang, QS; Wang, ZG; Jiang, DS; Sun, BQ |
| 刊名 | Journal of crystal growth
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| 出版日期 | 2000-12-01 |
| 卷号 | 220期号:4页码:439-443 |
| 关键词 | Quantum cascade laser Strain-compensation Molecular beam epitaxy |
| ISSN号 | 0022-0248 |
| 通讯作者 | Liu, fq() |
| 英文摘要 | Quantum cascade (qc) lasers based on strain-compensated inxga(1-x)as/inyal(1-y)as grown on inp substrate using molecular beam epitaxy is reported. the epitaxial quality is demonstrated by the abundant narrow satellite peaks of double-crystal x-ray diffraction and cross-section transmission electron microscopy of the qc laser wafer. laser action in quasi-continuous wave operation is achieved at lambda approximate to 3.6-3.7 mum at room temperature (34 degreesc) for 20 mum x 1.6 mm devices, with peak output powers of similar to 10.6mw and threshold current density of 2.7ka/cm(2) at this temperature. (c) 2000 published by elsevier science b.v. |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; MU-M ; PERFORMANCE |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000165957500014 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428808 |
| 专题 | 半导体研究所 |
| 通讯作者 | Liu, FQ |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, FQ,Ding, D,Xu, B,et al. Strain-compensated quantum cascade lasers operating at room temperature[J]. Journal of crystal growth,2000,220(4):439-443. |
| APA | Liu, FQ.,Ding, D.,Xu, B.,Zhang, YZ.,Zhang, QS.,...&Sun, BQ.(2000).Strain-compensated quantum cascade lasers operating at room temperature.Journal of crystal growth,220(4),439-443. |
| MLA | Liu, FQ,et al."Strain-compensated quantum cascade lasers operating at room temperature".Journal of crystal growth 220.4(2000):439-443. |
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来源:半导体研究所
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