Effect of buffer layer growth conditions on the secondary hexagonal phase content in cubic gan films on gaas(001) substrates
文献类型：期刊论文
| 作者 | Sun, XL; Yang, H; Wang, YT; Zheng, LX; Xu, DP; Zhao, DG; Li, SF; Wang, ZG |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2000-05-01 |
| 卷号 | 212期号:3-4页码:397-401 |
| 关键词 | Iii-v semiconductor mocvd rheed Xrdcd |
| ISSN号 | 0022-0248 |
| 通讯作者 | Sun, xl() |
| 英文摘要 | In this letter, we investigated the effect of the buffer layer growth conditions on the secondary hexagonal phase content in cubic gan films on gaas(0 0 1) substrate. the reflection high-energy electron diffraction (rheed) pattern of the low-temperature gan buffer layers shows that both the deposition temperature and time are important in obtaining a smooth surface. four-circle x-ray double-crystal diffraction (xrdcd) reciprocal space mapping was used to study the hexagonal phase inclusions in the cubic gan (c-gan) films grown on the buffer layers. the calculation of the volume contents of the hexagonal phase shows that higher temperature and longer time deposition of the buffer layer is not preferable for growing pure c-gan film. under optimized condition, 47 mev fwhm of near band gap emission of the c-gan film was achieved. (c) 2000 elsevier science b.v. all rights reserved. |
| WOS关键词 | SAPPHIRE |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000086819200005 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428809 |
| 专题 | 半导体研究所 |
| 通讯作者 | Sun, XL |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Sun, XL,Yang, H,Wang, YT,et al. Effect of buffer layer growth conditions on the secondary hexagonal phase content in cubic gan films on gaas(001) substrates[J]. Journal of crystal growth,2000,212(3-4):397-401. |
| APA | Sun, XL.,Yang, H.,Wang, YT.,Zheng, LX.,Xu, DP.,...&Wang, ZG.(2000).Effect of buffer layer growth conditions on the secondary hexagonal phase content in cubic gan films on gaas(001) substrates.Journal of crystal growth,212(3-4),397-401. |
| MLA | Sun, XL,et al."Effect of buffer layer growth conditions on the secondary hexagonal phase content in cubic gan films on gaas(001) substrates".Journal of crystal growth 212.3-4(2000):397-401. |
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来源：半导体研究所
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