Electronic characteristics of inas/gaas self-assembled quantum dots by deep level transient spectroscopy
文献类型：期刊论文
| 作者 | Wang, HL; Ning, D; Zhu, HJ; Chen, F; Wang, H; Wang, XD; Feng, SL |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2000 |
| 卷号 | 208期号:1-4页码:107-112 |
| 关键词 | Self-assembled quantum dots Inas/gaas Dlts Pl Activation energy Capture barrier |
| ISSN号 | 0022-0248 |
| 通讯作者 | Wang, hl() |
| 英文摘要 | A deep level transient spectroscopy technique has been used to determine the emission activation energies and capture barriers for electrons and holes in inas self-assembled quantum dots embedded in gaas. the ground electron and hole energies relative to their respective energy band edges of gaas are 0.13 and 0.09 ev. measurements show that the capture cross section of quantum dots is thermally activated. the capture barrier of quantum dots for electrons and holes are 0.30 and 0.26 ev, respectively. the results fit well with the results of photoluminescence spectroscopy measurements. (c) 2000 elsevier science b.v. all rights reserved. |
| WOS关键词 | ENERGY-LEVELS ; CARRIER RELAXATION ; GROWTH |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000084486400016 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428813 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang, HL |
| 作者单位 | Chinese Acad Sci, Natl Lab Superlattices & Microstruct, Inst Semicond, Beijing, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, HL,Ning, D,Zhu, HJ,et al. Electronic characteristics of inas/gaas self-assembled quantum dots by deep level transient spectroscopy[J]. Journal of crystal growth,2000,208(1-4):107-112. |
| APA | Wang, HL.,Ning, D.,Zhu, HJ.,Chen, F.,Wang, H.,...&Feng, SL.(2000).Electronic characteristics of inas/gaas self-assembled quantum dots by deep level transient spectroscopy.Journal of crystal growth,208(1-4),107-112. |
| MLA | Wang, HL,et al."Electronic characteristics of inas/gaas self-assembled quantum dots by deep level transient spectroscopy".Journal of crystal growth 208.1-4(2000):107-112. |
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来源：半导体研究所
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