Photoluminescence and optical quenching of photoconductivity studies on undoped gan grown by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Xu, HZ; Wang, ZG; Harrison, I; Bell, A; Ansell, BJ; Winser, AJ; Cheng, TS; Foxon, CT; Kawabe, M |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2000-08-01 |
| 卷号 | 217期号:3页码:228-232 |
| 关键词 | Gan Photoluminescence Optical quenching of photoconductivity Native defect level Molecular beam epitaxy |
| ISSN号 | 0022-0248 |
| 通讯作者 | Kawabe, m() |
| 英文摘要 | Deep levels in undoped gan materials grown by modified molecular beam epitaxy (mbe) are investigated by photoluminescence (pl) and optical quenching of photoconductivity measurements. a broad band which extends from 2.1 to 3.0 ev with a maximum at about 2.7 ev is observed, and four prominent quenching bands were found located at 2.18, 2.40, 2.71, and 2.78 ev above the valence band, respectively. these levels are attributed to four holes trap levels existence in the material. the defects cannot be firmly identified at present. (c) 2000 elsevier science b.v, all rights reserved. |
| WOS关键词 | N-TYPE GAN ; DEEP-LEVEL DEFECTS ; YELLOW LUMINESCENCE ; MAGNETIC-RESONANCE ; THIN-FILMS |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000088489400002 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428823 |
| 专题 | 半导体研究所 |
| 通讯作者 | Kawabe, M |
| 作者单位 | 1.Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan 2.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England 4.Univ Nottingham, Sch Elect & Elect Engn, Nottingham NG7 2RD, England |
| 推荐引用方式 GB/T 7714 | Xu, HZ,Wang, ZG,Harrison, I,et al. Photoluminescence and optical quenching of photoconductivity studies on undoped gan grown by molecular beam epitaxy[J]. Journal of crystal growth,2000,217(3):228-232. |
| APA | Xu, HZ.,Wang, ZG.,Harrison, I.,Bell, A.,Ansell, BJ.,...&Kawabe, M.(2000).Photoluminescence and optical quenching of photoconductivity studies on undoped gan grown by molecular beam epitaxy.Journal of crystal growth,217(3),228-232. |
| MLA | Xu, HZ,et al."Photoluminescence and optical quenching of photoconductivity studies on undoped gan grown by molecular beam epitaxy".Journal of crystal growth 217.3(2000):228-232. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。