Improvement of thin silicon on sapphire (sos) film materials and device performances by solid phase epitaxy
文献类型：期刊论文
| 作者 | Wang, QY; Nie, JP; Yu, F; Liu, ZL; Yu, YH |
| 刊名 | Materials science and engineering b-solid state materials for advanced technology
 |
| 出版日期 | 2000-03-15 |
| 卷号 | 72期号:2-3页码:189-192 |
| 关键词 | Solid phase epitaxy Silicon on sapphire (sos) Carrier mobility |
| ISSN号 | 0921-5107 |
| 通讯作者 | Wang, qy() |
| 英文摘要 | The increased emphasis on sub-micron cmos/sos devices has placed a demand for high quality thin silicon on sapphire (sos) films with thickness of the order 100-200 nm. it is demonstrated that the crystalline quality of as-grown thin sos films by the cvd method can be greatly improved by solid phase epitaxy (spe) process: implantation of self-silicon ions and subsequent thermal annealing. subsequent regrowth of this amorphous layer leads to a greater improvement in silicon layer crystallinity and channel carrier mobility, evidenced, respectively, by double crystal x-ray diffraction and electrical measurements. we concluded that the thin spe sos films are suitable for application to high-performance cmos circuitry. (c) 2000 elsevier science s.a. all rights reserved. |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Multidisciplinary ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000086130900029 |
| 出版者 | ELSEVIER SCIENCE SA |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428824 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang, QY |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, QY,Nie, JP,Yu, F,et al. Improvement of thin silicon on sapphire (sos) film materials and device performances by solid phase epitaxy[J]. Materials science and engineering b-solid state materials for advanced technology,2000,72(2-3):189-192. |
| APA | Wang, QY,Nie, JP,Yu, F,Liu, ZL,&Yu, YH.(2000).Improvement of thin silicon on sapphire (sos) film materials and device performances by solid phase epitaxy.Materials science and engineering b-solid state materials for advanced technology,72(2-3),189-192. |
| MLA | Wang, QY,et al."Improvement of thin silicon on sapphire (sos) film materials and device performances by solid phase epitaxy".Materials science and engineering b-solid state materials for advanced technology 72.2-3(2000):189-192. |
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来源：半导体研究所
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