Photoluminescence in si and be directly doped self-organized inas/gaas quantum dots
文献类型：期刊论文
| 作者 | Wang, HL; Yang, FH; Feng, SL |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2000-04-01 |
| 卷号 | 212期号:1-2页码:35-38 |
| 关键词 | Dopant Inas/gaas Self-organized quantum dots Mbe Pl |
| ISSN号 | 0022-0248 |
| 通讯作者 | Wang, hl() |
| 英文摘要 | We report on the photoluminescence in directly si- and be-doped self-organized inas/gaas quantum dots (qds). when the doping level is low, a decrease in linewidth is observed. however, it will decrease the uniformity and photoluminescence peak intensity of qds when the doping level is high. we relate this phenomenon to a model that takes the si or be atoms as the nucleation centers for the formation of qds. (c) 2000 elsevier science b.v. all rights reserved. |
| WOS关键词 | INFRARED-ABSORPTION ; INAS ISLANDS ; GROWTH ; GAAS |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000086678100005 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428829 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang, HL |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 2.Qufu Normal Univ, Dept Phys, Qufu 273165, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, HL,Yang, FH,Feng, SL. Photoluminescence in si and be directly doped self-organized inas/gaas quantum dots[J]. Journal of crystal growth,2000,212(1-2):35-38. |
| APA | Wang, HL,Yang, FH,&Feng, SL.(2000).Photoluminescence in si and be directly doped self-organized inas/gaas quantum dots.Journal of crystal growth,212(1-2),35-38. |
| MLA | Wang, HL,et al."Photoluminescence in si and be directly doped self-organized inas/gaas quantum dots".Journal of crystal growth 212.1-2(2000):35-38. |
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来源：半导体研究所
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