Effects of rapid thermal annealing on self-assembled ingaas/gaas quantum dots superlattice
文献类型：期刊论文
| 作者 | Zhuang, QD; Li, JM; Wang, XX; Zeng, YP; Wang, YT; Wang, BQ; Pan, L; Wu, J; Kong, MY; Lin, LY |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2000 |
| 卷号 | 208期号:1-4页码:791-794 |
| 关键词 | Ingaas/gaas Quantum dots Superlattice Annealing X-ray |
| ISSN号 | 0022-0248 |
| 通讯作者 | Zhuang, qd() |
| 英文摘要 | Postgrowth rapid thermal annealing was used to study the relaxation mechanism and optical properties of ingaas/gaas self-assembled quantum dots superlattice grown by molecular beam epitaxy. it is found that a significant narrowing of the luminescence linewidth (from 80 to 42 mev) occurs together with about 86 mev blue shift at annealing temperature up to 950 degrees c. double crystal x-ray diffraction measurements show that the intensity of the satellite diffraction peak, which corresponds to the quantum dots superlattice, decreased with the increasing annealing temperature and disappeared at 750 degrees c, but recovered and increased again at higher annealing temperatures. this behavior can be explained by two competing relaxation mechanisms; interdiffusion and favored migration. the study indicates that a suitable annealing treatment can improve the structural properties of the quantum dots superlattice. (c) 2000 elsevier science b.v. all rights reserved. |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; INFRARED PHOTODETECTORS ; STRAIN RELAXATION ; LUMINESCENCE ; HETEROSTRUCTURES ; DEPENDENCE ; ABSORPTION ; THRESHOLD ; OPERATION ; ISLANDS |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000084486400100 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428834 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhuang, QD |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Novel Mat Ctr, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhuang, QD,Li, JM,Wang, XX,et al. Effects of rapid thermal annealing on self-assembled ingaas/gaas quantum dots superlattice[J]. Journal of crystal growth,2000,208(1-4):791-794. |
| APA | Zhuang, QD.,Li, JM.,Wang, XX.,Zeng, YP.,Wang, YT.,...&Lin, LY.(2000).Effects of rapid thermal annealing on self-assembled ingaas/gaas quantum dots superlattice.Journal of crystal growth,208(1-4),791-794. |
| MLA | Zhuang, QD,et al."Effects of rapid thermal annealing on self-assembled ingaas/gaas quantum dots superlattice".Journal of crystal growth 208.1-4(2000):791-794. |
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来源：半导体研究所
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