1.35 mu m photoluminescence from in0.5ga0.5as/gaas islands grown by molecular beam epitaxy via cycled (inas)(1)/(gaas)(1) monolayer deposition
文献类型：期刊论文
| 作者 | Wang, XD; Niu, ZC; Feng, SL; Miao, ZH |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2000-11-01 |
| 卷号 | 220期号:1-2页码:16-22 |
| 关键词 | Mbe Afm Pl Quantum islands Ingaas/gaas Strain |
| ISSN号 | 0022-0248 |
| 通讯作者 | Wang, xd() |
| 英文摘要 | 1.35 mum photoluminescence (pl) with a narrow linewidth of only 19.2 mev at room temperature has been achieved in in0.5ga0.5as islands structure grown on gaas (1 0 0) substrate by solid-source molecular beam epitaxy. atomic force microscopy (afm) measurement reveals that the 16-ml-thick in0.5ga0.5as islands show quite uniform ingaas mounds morphology along the [ 1(1) over bar 0] direction with a periodicity of about 90 nm in the [1 1 0] direction. compared with the in0.5ga0.5as alloy quantum well (qw) of the same width, the in0.5ga0.5as islands structure always shows a lower pl peak energy and narrower full-width at half-maximum (fwhm), also a stronger pl intensity at low excitation power and more efficient confinement of the carriers. our results provide important information for optimizing the epitaxial structures of 1.3 mum wavelength quantum dots devices. (c) 2000 elsevier science b.v. all rights reserved. |
| WOS关键词 | QUANTUM DOTS ; ROOM-TEMPERATURE ; GAAS ; LUMINESCENCE |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000165423000003 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428838 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang, XD |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, XD,Niu, ZC,Feng, SL,et al. 1.35 mu m photoluminescence from in0.5ga0.5as/gaas islands grown by molecular beam epitaxy via cycled (inas)(1)/(gaas)(1) monolayer deposition[J]. Journal of crystal growth,2000,220(1-2):16-22. |
| APA | Wang, XD,Niu, ZC,Feng, SL,&Miao, ZH.(2000).1.35 mu m photoluminescence from in0.5ga0.5as/gaas islands grown by molecular beam epitaxy via cycled (inas)(1)/(gaas)(1) monolayer deposition.Journal of crystal growth,220(1-2),16-22. |
| MLA | Wang, XD,et al."1.35 mu m photoluminescence from in0.5ga0.5as/gaas islands grown by molecular beam epitaxy via cycled (inas)(1)/(gaas)(1) monolayer deposition".Journal of crystal growth 220.1-2(2000):16-22. |
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来源：半导体研究所
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