The improvement characteristics of homoepitaxial gaas grown by atomic hydrogen-assisted molecular beam epitaxy
文献类型：期刊论文
| 作者 | Wang, HL; Zhu, HJ; Ning, D; Wang, H; Wang, XD; Guo, ZS; Feng, SL |
| 刊名 | Journal of infrared and millimeter waves
 |
| 出版日期 | 2000-06-01 |
| 卷号 | 19期号:3页码:191-193 |
| ISSN号 | 1001-9014 |
| 关键词 | Atomic hydrogen-assisted molecular beam epitaxy Deep level transient spectroscopy Deep level defects |
| 通讯作者 | Ning, d() |
| 英文摘要 | The electrical activity of defects in gaas grown on gaas substrates doped with si and be by both conventional molecular beam epitaxy (mbe) and atomic hydrogen-assisted mbe (h-mbe) were characterized by deep level transient spectroscopy. the trap densities are significantly reduced in the homoepitaxial gaas grown by h-mbe compared to that grown by mbe. the reduction of trap densities is attributed to in situ passivation of these defects by atomic h during the growth. the improvement characteristics of gaas materials will be significance for fabrication of semiconductor devices. |
| WOS关键词 | DISLOCATION DENSITY ; IRRADIATION |
| WOS研究方向 | Optics |
| WOS类目 | Optics |
| 语种 | 英语 |
| 出版者 | SCIENCE PRESS |
| WOS记录号 | WOS:000087691900008 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428841 |
| 专题 | 半导体研究所 |
| 通讯作者 | Ning, D |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, HL,Zhu, HJ,Ning, D,et al. The improvement characteristics of homoepitaxial gaas grown by atomic hydrogen-assisted molecular beam epitaxy[J]. Journal of infrared and millimeter waves,2000,19(3):191-193. |
| APA | Wang, HL.,Zhu, HJ.,Ning, D.,Wang, H.,Wang, XD.,...&Feng, SL.(2000).The improvement characteristics of homoepitaxial gaas grown by atomic hydrogen-assisted molecular beam epitaxy.Journal of infrared and millimeter waves,19(3),191-193. |
| MLA | Wang, HL,et al."The improvement characteristics of homoepitaxial gaas grown by atomic hydrogen-assisted molecular beam epitaxy".Journal of infrared and millimeter waves 19.3(2000):191-193. |
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来源：半导体研究所
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