Influence of indium composition on the surface morphology of self-organized in(x)ga(1-x)as quantum dots on gaas substrates
文献类型：期刊论文
| 作者 | Li, HX; Zhuang, QD; Wang, ZG; Daniels-Race, T |
| 刊名 | Journal of applied physics
 |
| 出版日期 | 2000 |
| 卷号 | 87期号:1页码:188-191 |
| ISSN号 | 0021-8979 |
| 通讯作者 | Li, hx(hxli@ee.duke.edu) |
| 英文摘要 | In(x)ga(1-x)as self-organized quantum dots with x=1.0, 0.5, and 0.35 have been grown by molecular beam epitaxy. the areal density, distribution, and shapes have been found to be dependent on x. the dot shape changes from a round shape for x=1.0 to an elliptical shape for x less than or equal to 0.5. the major axis and minor axis of the elliptical in(x)ga(1-x)as dots are along the [(1) over bar 10] and [110] directions, respectively. the ordering phenomenon is also discussed. it is suggested that the dot-dot interaction may play important roles in the self-organization process. (c) 2000 american institute of physics. [s0021-8979(00)10701-7]. |
| WOS关键词 | MOLECULAR-BEAM-EPITAXY ; STRAINED ISLANDS ; DEPOSITION ; EVOLUTION ; MATRIX |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000084244300027 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428848 |
| 专题 | 半导体研究所 |
| 通讯作者 | Li, HX |
| 作者单位 | 1.Duke Univ, Dept Elect & Comp Engn, Durham, NC 27708 USA 2.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, HX,Zhuang, QD,Wang, ZG,et al. Influence of indium composition on the surface morphology of self-organized in(x)ga(1-x)as quantum dots on gaas substrates[J]. Journal of applied physics,2000,87(1):188-191. |
| APA | Li, HX,Zhuang, QD,Wang, ZG,&Daniels-Race, T.(2000).Influence of indium composition on the surface morphology of self-organized in(x)ga(1-x)as quantum dots on gaas substrates.Journal of applied physics,87(1),188-191. |
| MLA | Li, HX,et al."Influence of indium composition on the surface morphology of self-organized in(x)ga(1-x)as quantum dots on gaas substrates".Journal of applied physics 87.1(2000):188-191. |
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来源：半导体研究所
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