Photoelectrochemical behavior of a novel composite in0.15ga0.85as/gaas vertical bar gaas/al0.3ga0.7as multiple quantum well electrode
文献类型：期刊论文
| 作者 | Liu, Y; Xiao, XR; Zeng, YP |
| 刊名 | Electrochemistry communications
 |
| 出版日期 | 2000-06-01 |
| 卷号 | 2期号:6页码:404-406 |
| 关键词 | Multiple quantum well electrode Quantization effect Exciton transition Photocurrent spectrum Photoelectrochemical cell |
| ISSN号 | 1388-2481 |
| 通讯作者 | Xiao, xr() |
| 英文摘要 | A novel composite inxga1-xas/gaas/gaas/alxga1-xas multiple quantum well material with different well widths was studied as a new kind of photoelectrode in a photoelectrochemical cell. the photocurrent spectrum and photocurrent-electrode potential curve were measured in ferrocene nonaqueous solution. pronounced quantization effects and strong exciton absorption were observed in the photocurrent spectrum. the effects of surface states and interfacial states on the photocurrent-electrode potential curve are discussed. (c) 2000 elsevier science s.a. all rights reserved. |
| WOS关键词 | SOLAR-CELLS ; PHOTOCURRENT SPECTROSCOPY ; SUPERLATTICE ELECTRODES ; EFFICIENCY ; PHOTOLUMINESCENCE ; HETEROSTRUCTURE |
| WOS研究方向 | Electrochemistry |
| WOS类目 | Electrochemistry |
| 语种 | 英语 |
| WOS记录号 | WOS:000087331300007 |
| 出版者 | ELSEVIER SCIENCE INC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428852 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xiao, XR |
| 作者单位 | 1.Chinese Acad Sci, Inst Chem, Ctr Mol Sci, Beijing 100101, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, Y,Xiao, XR,Zeng, YP. Photoelectrochemical behavior of a novel composite in0.15ga0.85as/gaas vertical bar gaas/al0.3ga0.7as multiple quantum well electrode[J]. Electrochemistry communications,2000,2(6):404-406. |
| APA | Liu, Y,Xiao, XR,&Zeng, YP.(2000).Photoelectrochemical behavior of a novel composite in0.15ga0.85as/gaas vertical bar gaas/al0.3ga0.7as multiple quantum well electrode.Electrochemistry communications,2(6),404-406. |
| MLA | Liu, Y,et al."Photoelectrochemical behavior of a novel composite in0.15ga0.85as/gaas vertical bar gaas/al0.3ga0.7as multiple quantum well electrode".Electrochemistry communications 2.6(2000):404-406. |
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来源：半导体研究所
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