Microstructures of microcrystalline silicon thin films prepared by hot wire chemical vapor deposition
文献类型：期刊论文
| 作者 | Zhu, M; Guo, X; Chen, G; Han, H; He, M; Sun, K |
| 刊名 | Thin solid films
 |
| 出版日期 | 2000-02-01 |
| 卷号 | 360期号:1-2页码:205-212 |
| 关键词 | Microstructures Microcrystalline silicon Hot wire chemical vapor deposition |
| ISSN号 | 0040-6090 |
| 通讯作者 | Zhu, m() |
| 英文摘要 | Undoped hydrogenated microcrystalline silicon (mu c-si:h) thin films were prepared at low temperature by hot wire chemical vapor deposition (hwcvd). microstructures of the mu c-si:h films with different h-2/sih4 ratios and deposition pressures have been characterized by infrared spectroscopy x-ray diffraction (xrd), raman scattering, fourier transform (ftir), cross-sectional transmission electron microscopy (tem) and small angle x-ray scattering (sax). the crystallization of silicon thin film was enhanced by hydrogen dilution and deposition pressure. the tem result shows the columnar growth of mu c-si:h thin films. an initial microcrystalline si layer on the glass substrate, instead of the amorphous layer commonly observed in plasma enhanced chemical vapor deposition (pecvd), was observed from tem and backside incident raman spectra. the saxs data indicate an enhancement of the mass density of mu c-si:h films by hydrogen dilution. finally, combining the ftir data with the saxs experiment suggests that the si--h bonds in mu c-si:h and in polycrystalline si thin films are located at the grain boundaries. (c) 2000 elsevier science s.a. all rights reserved. |
| WOS关键词 | AMORPHOUS-SILICON ; HYDROGEN ; PLASMA ; SPECTRA ; GROWTH ; SILANE |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Multidisciplinary ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000085418600033 |
| 出版者 | ELSEVIER SCIENCE SA |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428854 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhu, M |
| 作者单位 | 1.Univ Sci & Technol China, Grad Sch, Beijing 100039, Peoples R China 2.CAS, Lab Semicond Mat Sci, Beijing 100039, Peoples R China 3.CAS, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100084, Peoples R China 4.Dalian Univ Technol, Dalian 116024, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhu, M,Guo, X,Chen, G,et al. Microstructures of microcrystalline silicon thin films prepared by hot wire chemical vapor deposition[J]. Thin solid films,2000,360(1-2):205-212. |
| APA | Zhu, M,Guo, X,Chen, G,Han, H,He, M,&Sun, K.(2000).Microstructures of microcrystalline silicon thin films prepared by hot wire chemical vapor deposition.Thin solid films,360(1-2),205-212. |
| MLA | Zhu, M,et al."Microstructures of microcrystalline silicon thin films prepared by hot wire chemical vapor deposition".Thin solid films 360.1-2(2000):205-212. |
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来源：半导体研究所
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