Carrier capture into inas/gaas quantum dots detected by a simple degenerate pump-probe technique
文献类型：期刊论文
| 作者 | Li, Q; Xu, ZY; Ge, WK |
| 刊名 | Solid state communications
 |
| 出版日期 | 2000 |
| 卷号 | 115期号:2页码:105-108 |
| 关键词 | Nanostructures Semiconductors Optical properties Time-resolved optical spectroscopies |
| ISSN号 | 0038-1098 |
| 通讯作者 | Xu, zy() |
| 英文摘要 | We demonstrate that the carrier capture and relaxation processes in inas/gaas quantum dots can be detected by a simple degenerate pump-probe technique. we have observed a rising process in the transient reflectivity, following the initial fast relaxation in a gaas matrix, and assigned this rising process to the carrier capture from the gaas barriers to the inas layers. the assignment was modeled using the kramers-kronig relations. the capture time was found to depend strongly on the inas layer thickness as well as on the excitation density and photon energy. (c) 2000 elsevier science ltd. all rights reserved. |
| WOS关键词 | GAAS ; RELAXATION ; ISLANDS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000087302200011 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428855 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xu, ZY |
| 作者单位 | 1.Acad Sinica, Inst Semicond, Natl Lab Supperlattices & Microstruct, Beijing 100083, Peoples R China 2.Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, Q,Xu, ZY,Ge, WK. Carrier capture into inas/gaas quantum dots detected by a simple degenerate pump-probe technique[J]. Solid state communications,2000,115(2):105-108. |
| APA | Li, Q,Xu, ZY,&Ge, WK.(2000).Carrier capture into inas/gaas quantum dots detected by a simple degenerate pump-probe technique.Solid state communications,115(2),105-108. |
| MLA | Li, Q,et al."Carrier capture into inas/gaas quantum dots detected by a simple degenerate pump-probe technique".Solid state communications 115.2(2000):105-108. |
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来源：半导体研究所
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