The formation and characteristics of si1-xcx alloys in si crystals by means of implantation of cions with different doses
文献类型：期刊论文
| 作者 | Wang, YS; Li, JM; Jin, YF; Wang, YT; Lin, LY |
| 刊名 | Acta physica sinica
 |
| 出版日期 | 2000-11-01 |
| 卷号 | 49期号:11页码:2210-2213 |
| 关键词 | Si1-xcx alloy Ion implantation Solid phase epitaxy |
| ISSN号 | 1000-3290 |
| 通讯作者 | Wang, ys() |
| 英文摘要 | Carbon ions with concentration of (0.6-1.5)% were implanted into silicon crystals at room temperature and si1-xcx alloys were grown by solid phase epitaxy with high temperature annealing. the formation and characteristics of si1-xcx alloys under different implanted carbon doses were studied. if the implanted carbon atom concentration was less than 0.6%, carbon atoms would tend to combine with the defects produced during implantation and it was difficult for si1-xcx alloys to form during annealing at 850-950 degreesc. with the increase of implanted c concentration, almost all implanted carbon atoms would occupy substitution positions to form si1-xcx alloys, but only part of implanted carbon atoms would occupy the substitution position to form si1-xcx alloys as the implanted dose increased to 1.5 %. most si1-xcx alloy phases would vanish as the annealing temperature was increased higher. |
| WOS关键词 | CARBON |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000165204200018 |
| 出版者 | CHINESE PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428857 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang, YS |
| 作者单位 | 1.Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China 3.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, YS,Li, JM,Jin, YF,et al. The formation and characteristics of si1-xcx alloys in si crystals by means of implantation of cions with different doses[J]. Acta physica sinica,2000,49(11):2210-2213. |
| APA | Wang, YS,Li, JM,Jin, YF,Wang, YT,&Lin, LY.(2000).The formation and characteristics of si1-xcx alloys in si crystals by means of implantation of cions with different doses.Acta physica sinica,49(11),2210-2213. |
| MLA | Wang, YS,et al."The formation and characteristics of si1-xcx alloys in si crystals by means of implantation of cions with different doses".Acta physica sinica 49.11(2000):2210-2213. |
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来源：半导体研究所
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