Growth and characterization of strained superlattices delta-ganxas1-x/gaas by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Pan, Z; Li, LH; Lin, YW; Zhou, ZQ; Zhang, W; Wang, YT; Wu, RH |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2000-02-01 |
| 卷号 | 209期号:4页码:648-652 |
| 关键词 | Ganas/gaas superlattice X-ray diffraction Periodicity fluctuation Mbe Rheed |
| ISSN号 | 0022-0248 |
| 通讯作者 | Pan, z() |
| 英文摘要 | A series of superlattices delta-ganxas1-x/gaas were grown by a dc plasma-n-2-assisted molecular beam epitaxy. the evolution of the surface reconstruction during the growth has been studied with the use of in situ reflection high-energy electron diffraction. the superlattices have been characterized by high-resolution x-ray diffraction measurements. distinct satellite peaks indicate that the superlattices are of good quality. the n compositions in strained ganxas1-x monolayers are obtained from the dynamical simulations of the measured x-ray diffraction patterns. the periodicity fluctuations of n composition are obtained from a kinematical method dependent on the broadening of the satellite peaks of the x-ray diffraction. (c) 2000 elsevier science b.v. all rights reserved. |
| WOS关键词 | BAND-GAP ENERGY ; NITROGEN ; ALLOYS ; DIFFRACTION ; COEFFICIENT ; SOLUBILITY ; OPERATION ; GAAS1-XNX ; GAASN |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000085508500012 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428859 |
| 专题 | 半导体研究所 |
| 通讯作者 | Pan, Z |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Pan, Z,Li, LH,Lin, YW,et al. Growth and characterization of strained superlattices delta-ganxas1-x/gaas by molecular beam epitaxy[J]. Journal of crystal growth,2000,209(4):648-652. |
| APA | Pan, Z.,Li, LH.,Lin, YW.,Zhou, ZQ.,Zhang, W.,...&Wu, RH.(2000).Growth and characterization of strained superlattices delta-ganxas1-x/gaas by molecular beam epitaxy.Journal of crystal growth,209(4),648-652. |
| MLA | Pan, Z,et al."Growth and characterization of strained superlattices delta-ganxas1-x/gaas by molecular beam epitaxy".Journal of crystal growth 209.4(2000):648-652. |
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来源：半导体研究所
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