Semi-insulating gaas grown in outer space
文献类型：期刊论文
| 作者 | Chen, NF; Zhong, XR; Lin, LY; Xie, X; Zhang, M |
| 刊名 | Materials science and engineering b-solid state materials for advanced technology
 |
| 出版日期 | 2000-06-01 |
| 卷号 | 75期号:2-3页码:134-138 |
| 关键词 | Gaas Outer space Microgravity Integrated circuit |
| ISSN号 | 0921-5107 |
| 通讯作者 | Chen, nf() |
| 英文摘要 | A semi-insulating gaas single crystal ingot was grown in a recoverable satellite, within a specially designed pyrolytic boron nitride crucible, in a power-traveling furnace under microgravity. the characteristics of a compound semiconductor single crystal depends fundamentally on its stoichiometry, i.e. the ration of two types of atoms in the crystal. a practical technique for nondestructive and quantitative measuring stoichiometry in gaas single crystal was used to analyze the space-grown gaas single crystal. the distribution of stoichiometry in a gaas wafer was measured for the first time. the electrical, optical and structural properties of the space-grown gaas crystal were studied systematically, device fabricating experiments prove that the quality of field effect transistors fabricated from direct ion-implantation in semi-insulating gaas wafers has a close correlation with the crystal's stoichiometry. (c) 2000 elsevier science s.a. all rights reserved. |
| WOS关键词 | SEMIINSULATING GALLIUM-ARSENIDE ; LEC-GAAS ; DEFECTS ; STOICHIOMETRY ; SEGREGATION ; CARBON ; BORON |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Multidisciplinary ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000087378500010 |
| 出版者 | ELSEVIER SCIENCE SA |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428862 |
| 专题 | 半导体研究所 |
| 通讯作者 | Chen, NF |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.CAST, Lanzhou Inst Phys, Lanzhou 625065, Peoples R China 3.Hebei Inst Semicond, Shijiazhuang 050002, Hebei, Peoples R China |
| 推荐引用方式 GB/T 7714 | Chen, NF,Zhong, XR,Lin, LY,et al. Semi-insulating gaas grown in outer space[J]. Materials science and engineering b-solid state materials for advanced technology,2000,75(2-3):134-138. |
| APA | Chen, NF,Zhong, XR,Lin, LY,Xie, X,&Zhang, M.(2000).Semi-insulating gaas grown in outer space.Materials science and engineering b-solid state materials for advanced technology,75(2-3),134-138. |
| MLA | Chen, NF,et al."Semi-insulating gaas grown in outer space".Materials science and engineering b-solid state materials for advanced technology 75.2-3(2000):134-138. |
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来源：半导体研究所
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