Point defects in iii-v compound semiconductors
文献类型：期刊论文
| 作者 | Chen, N |
| 刊名 | Defects and diffusion in semiconductors
 |
| 出版日期 | 2000 |
| 卷号 | 183-1页码:85-93 |
| 关键词 | Compound semiconductors Point defects Deep level centres Stoichiometry |
| ISSN号 | 1012-0386 |
| 通讯作者 | Chen, n() |
| 英文摘要 | Point defects in iii-v compound semiconductors were analyzed systematically in this paper. the effects of substitutes, antisites, interstitials, and vacancies on lattice parameters in iii-v compound semiconductors were calculated with a simple model. the formation energies of vacancies in compound semiconductors can be obtained by this calculation. a practical technique established on this model has been utilized for measuring the stoichiometry in gaas. the relationship between stoichiometry and deep level centers in gaas was also investigated. |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; GAAS SINGLE-CRYSTALS ; SEMIINSULATING GALLIUM-ARSENIDE ; SEMI-INSULATING GAAS ; ELECTRICAL-PROPERTIES ; LATTICE-PARAMETER ; NATIVE DEFECTS ; CARBON ; DIFFRACTOMETER ; STOICHIOMETRY |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Multidisciplinary ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000089882500007 |
| 出版者 | SCITEC PUBLICATIONS LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428865 |
| 专题 | 半导体研究所 |
| 通讯作者 | Chen, N |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100864, Peoples R China |
| 推荐引用方式 GB/T 7714 | Chen, N. Point defects in iii-v compound semiconductors[J]. Defects and diffusion in semiconductors,2000,183-1:85-93. |
| APA | Chen, N.(2000).Point defects in iii-v compound semiconductors.Defects and diffusion in semiconductors,183-1,85-93. |
| MLA | Chen, N."Point defects in iii-v compound semiconductors".Defects and diffusion in semiconductors 183-1(2000):85-93. |
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来源：半导体研究所
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