Surface states induced photoluminescence from mn2+ doped cds nanoparticles
文献类型：期刊论文
| 作者 | Liu, SM; Liu, FQ; Guo, HQ; Zhang, ZH; Wang, ZG |
| 刊名 | Solid state communications
 |
| 出版日期 | 2000 |
| 卷号 | 115期号:11页码:615-618 |
| 关键词 | Nanostructure Chemical synthesis Optical properties Impurities in semiconductors |
| ISSN号 | 0038-1098 |
| 通讯作者 | Liu, sm(liushm@red.semi.ac.cn) |
| 英文摘要 | Manganese doped cds nanoparticles were synthesized in basic aqueous solution by using mercapto acetate as capping reagents. the nanoparticles were characterized by hrtem, epr, photoluminescence and optical absorption measurements. out of our expectation, doping of mn2+ ions altered the recombination paths in cds nanoparticles markedly. the surface stares facilitated pl from mn2+ doped cds nanoparticles is reported. a complete suppression of the emission from surface states at room temperature when doping with mn2+ ions has been observed for the first time. (c) 2000 elsevier science ltd. all rights reserved. |
| WOS关键词 | LUMINESCENCE PROPERTIES ; OPTICAL-PROPERTIES ; NANOCRYSTALS ; SIZE ; CRYSTALLITES |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000088551800008 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428868 |
| 专题 | 半导体研究所 |
| 通讯作者 | Liu, SM |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Peking Univ, Coll Chem & Mol Engn, State Key Lab Rare Earth Mat Chem & Applicat, Beijing 100871, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, SM,Liu, FQ,Guo, HQ,et al. Surface states induced photoluminescence from mn2+ doped cds nanoparticles[J]. Solid state communications,2000,115(11):615-618. |
| APA | Liu, SM,Liu, FQ,Guo, HQ,Zhang, ZH,&Wang, ZG.(2000).Surface states induced photoluminescence from mn2+ doped cds nanoparticles.Solid state communications,115(11),615-618. |
| MLA | Liu, SM,et al."Surface states induced photoluminescence from mn2+ doped cds nanoparticles".Solid state communications 115.11(2000):615-618. |
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来源：半导体研究所
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