Fabrication and characterization of metal-semiconductor-metal (msm) ultraviolet photodetectors on undoped gan/sapphire grown by mbe
文献类型：期刊论文
| 作者 | Xu, HZ; Wang, ZG; Kawabe, M; Harrison, I; Ansell, BJ; Foxon, CT |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2000-09-01 |
| 卷号 | 218期号:1页码:1-6 |
| 关键词 | Gan Photoluminescence Optical quenching of photoconductivity Native defect level Molecular beam epitaxy |
| ISSN号 | 0022-0248 |
| 通讯作者 | Xu, hz() |
| 英文摘要 | Interdigital metal-semiconductor-metal (msm) ultraviolet photoconductive detectors have been fabricated on undoped gan films grown by molecular beam epitaxy (mbe), response dependence on wavelength, applied current, excitation powers and chopper frequency has been extensively investigated. it is shown that the photodetector's spectral response remained nearly constant for wavelengths above the band gap and dropped sharply by almost three orders of magnitude for wavelengths longer than the band gap. it increases linearly with the applied constant current, but very nonlinearly with illuminating power. the photodetectors showed high photoconductor gains resulting from trapping of minority carriers (holes) at acceptor impurities or defects. the results demonstrated the high quality of the gan crystal used to fabricate these devices. (c) 2000 elsevier science b.v. all rights reserved. |
| WOS关键词 | SINGLE-CRYSTAL GAN ; I-N PHOTODIODES ; HIGH-SPEED ; PHOTOCONDUCTORS ; ALXGA1-XN ; SIMULATIONS ; DETECTORS ; SAPPHIRE ; LAYERS |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000089038100001 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428872 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xu, HZ |
| 作者单位 | 1.Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan 2.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England 4.Univ Nottingham, Sch Elect & Elect Engn, Nottingham NG7 2RD, England |
| 推荐引用方式 GB/T 7714 | Xu, HZ,Wang, ZG,Kawabe, M,et al. Fabrication and characterization of metal-semiconductor-metal (msm) ultraviolet photodetectors on undoped gan/sapphire grown by mbe[J]. Journal of crystal growth,2000,218(1):1-6. |
| APA | Xu, HZ,Wang, ZG,Kawabe, M,Harrison, I,Ansell, BJ,&Foxon, CT.(2000).Fabrication and characterization of metal-semiconductor-metal (msm) ultraviolet photodetectors on undoped gan/sapphire grown by mbe.Journal of crystal growth,218(1),1-6. |
| MLA | Xu, HZ,et al."Fabrication and characterization of metal-semiconductor-metal (msm) ultraviolet photodetectors on undoped gan/sapphire grown by mbe".Journal of crystal growth 218.1(2000):1-6. |
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来源：半导体研究所
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