Quasi-thermodynamic analysis of movpe of algan
文献类型：期刊论文
| 作者 | Lu, DC; Duan, S |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2000 |
| 卷号 | 208期号:1-4页码:73-78 |
| 关键词 | Algan Thermodynamic Movpe Aluminium content |
| ISSN号 | 0022-0248 |
| 通讯作者 | Lu, dc() |
| 英文摘要 | A quasi-thermodynamic analysis of the movpe growth of alxga1-xn alloy using tmga, tma1 and ammonia has been proposed. the effect of varying growth conditions (growth temperature, reactor pressure, input v/iii ratio, hydrogen pressure fraction in the carrier gas and the decomposed fraction of ammonia) on the distribution coefficient of al has been calculated. in the case of alxga1-xn, preferential incorporation of al is predicted. the calculated relationship between input vapour and deposited solid composition has been compared with data in the literature. a good agreement between the calculated and the experimental composition shows that our improved model is suitable for applying to the alxga1-xn alloy grown by movpe. (c) 2000 elsevier science b.v. all rights reserved. |
| WOS关键词 | VAPOR-PHASE EPITAXY ; GROWTH ; NITRIDE ; REGION ; ALLOYS |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000084486400011 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428886 |
| 专题 | 半导体研究所 |
| 通讯作者 | Lu, DC |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Natl Integrated Optoelect Lab, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Lu, DC,Duan, S. Quasi-thermodynamic analysis of movpe of algan[J]. Journal of crystal growth,2000,208(1-4):73-78. |
| APA | Lu, DC,&Duan, S.(2000).Quasi-thermodynamic analysis of movpe of algan.Journal of crystal growth,208(1-4),73-78. |
| MLA | Lu, DC,et al."Quasi-thermodynamic analysis of movpe of algan".Journal of crystal growth 208.1-4(2000):73-78. |
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来源：半导体研究所
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