中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
A study of si1-xgex/si quantum-well intermixing by photocurrent spectroscopy

文献类型:期刊论文

作者Li, C; Yang, QQ; Chen, YH; Wang, HJ; Wang, JZ; Yu, JZ; Wang, QM
刊名Thin solid films
出版日期2000-01-31
卷号359期号:2页码:236-238
关键词Quantum well intermixing Photocurrent spectroscopy Photoelectronic devices Sige/si mqw Blue shift energy
ISSN号0040-6090
通讯作者Li, c()
英文摘要Photocurrent spectroscopy has been used to study quantum-well intermixing in this paper. the cut-off wavelength of the photodiodes based on the implanted and annealed materials is significantly reduced, compared with that measured in annealed-only photodetectors. the bandgap of sige quantum well in implanted and annealed samples is blue-shifted by up to 97 mev, relative to that in annealed-only samples. (c) 2000 elsevier science s.a. all rights reserved.
WOS关键词ION-IMPLANTATION
WOS研究方向Materials Science ; Physics
WOS类目Materials Science, Multidisciplinary ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
语种英语
WOS记录号WOS:000084847700020
出版者ELSEVIER SCIENCE SA
URI标识http://www.irgrid.ac.cn/handle/1471x/2428887
专题半导体研究所
通讯作者Li, C
作者单位1.Chinese Acad Sci, Inst Semicond, Natl Integrated Optoelect Lab, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Li, C,Yang, QQ,Chen, YH,et al. A study of si1-xgex/si quantum-well intermixing by photocurrent spectroscopy[J]. Thin solid films,2000,359(2):236-238.
APA Li, C.,Yang, QQ.,Chen, YH.,Wang, HJ.,Wang, JZ.,...&Wang, QM.(2000).A study of si1-xgex/si quantum-well intermixing by photocurrent spectroscopy.Thin solid films,359(2),236-238.
MLA Li, C,et al."A study of si1-xgex/si quantum-well intermixing by photocurrent spectroscopy".Thin solid films 359.2(2000):236-238.

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来源:半导体研究所

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