A study of si1-xgex/si quantum-well intermixing by photocurrent spectroscopy
文献类型：期刊论文
| 作者 | Li, C; Yang, QQ; Chen, YH; Wang, HJ; Wang, JZ; Yu, JZ; Wang, QM |
| 刊名 | Thin solid films
 |
| 出版日期 | 2000-01-31 |
| 卷号 | 359期号:2页码:236-238 |
| 关键词 | Quantum well intermixing Photocurrent spectroscopy Photoelectronic devices Sige/si mqw Blue shift energy |
| ISSN号 | 0040-6090 |
| 通讯作者 | Li, c() |
| 英文摘要 | Photocurrent spectroscopy has been used to study quantum-well intermixing in this paper. the cut-off wavelength of the photodiodes based on the implanted and annealed materials is significantly reduced, compared with that measured in annealed-only photodetectors. the bandgap of sige quantum well in implanted and annealed samples is blue-shifted by up to 97 mev, relative to that in annealed-only samples. (c) 2000 elsevier science s.a. all rights reserved. |
| WOS关键词 | ION-IMPLANTATION |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Multidisciplinary ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000084847700020 |
| 出版者 | ELSEVIER SCIENCE SA |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428887 |
| 专题 | 半导体研究所 |
| 通讯作者 | Li, C |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Natl Integrated Optoelect Lab, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, C,Yang, QQ,Chen, YH,et al. A study of si1-xgex/si quantum-well intermixing by photocurrent spectroscopy[J]. Thin solid films,2000,359(2):236-238. |
| APA | Li, C.,Yang, QQ.,Chen, YH.,Wang, HJ.,Wang, JZ.,...&Wang, QM.(2000).A study of si1-xgex/si quantum-well intermixing by photocurrent spectroscopy.Thin solid films,359(2),236-238. |
| MLA | Li, C,et al."A study of si1-xgex/si quantum-well intermixing by photocurrent spectroscopy".Thin solid films 359.2(2000):236-238. |
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来源：半导体研究所
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