Carbon film deposited by mass-selected low energy ion beam technique and ion bombardment effect
文献类型：期刊论文
| 作者 | Liao, MY; Zhang, JH; Qin, FG; Liu, ZK; Yang, SY; Wang, ZG; Lee, ST |
| 刊名 | Acta physica sinica
 |
| 出版日期 | 2000-11-01 |
| 卷号 | 49期号:11页码:2186-2190 |
| 关键词 | Amorphous carbon Ion bombardment Mass-selected low energy ion beam |
| ISSN号 | 1000-3290 |
| 通讯作者 | Liao, my() |
| 英文摘要 | By mass-selected low energy ion beam deposition, amorphous carbon film was obtained. x-ray diffraction, raman and auger electron spectroscopy depth line shape measurements showed that such carbon films contained diamond particles. the main growth mechanism is subsurface implantation. furthermore, it was indicated in a different way that ion bombardment played a decisive role in bias enhanced nucleation of chemical vapor deposition diamond. |
| WOS关键词 | CHEMICAL-VAPOR-DEPOSITION ; BIAS-ENHANCED NUCLEATION ; DIAMOND FILMS ; RAMAN-SCATTERING ; GROWTH ; SILICON ; MECHANISM |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000165204200014 |
| 出版者 | CHINESE PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428890 |
| 专题 | 半导体研究所 |
| 通讯作者 | Liao, MY |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liao, MY,Zhang, JH,Qin, FG,et al. Carbon film deposited by mass-selected low energy ion beam technique and ion bombardment effect[J]. Acta physica sinica,2000,49(11):2186-2190. |
| APA | Liao, MY.,Zhang, JH.,Qin, FG.,Liu, ZK.,Yang, SY.,...&Lee, ST.(2000).Carbon film deposited by mass-selected low energy ion beam technique and ion bombardment effect.Acta physica sinica,49(11),2186-2190. |
| MLA | Liao, MY,et al."Carbon film deposited by mass-selected low energy ion beam technique and ion bombardment effect".Acta physica sinica 49.11(2000):2186-2190. |
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来源：半导体研究所
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