Formation of inas quantum dots on low-temperature gaas epi-layer
文献类型：期刊论文
| 作者 | Wang, XD; Niu, ZC; Wang, H; Feng, SL |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2000-09-01 |
| 卷号 | 218期号:2-4页码:209-213 |
| 关键词 | Quantum dot Low-temperature gaas As precipitates Annealing Tem Pl |
| ISSN号 | 0022-0248 |
| 通讯作者 | Wang, xd() |
| 英文摘要 | Inas self-organized quantum dots (qds) grown on annealed low-temperature gaas (lt-gaas) epi-layers and on normal temperature gaas buffer layers have been compared by transmission electron microscopy (tem) and photoluminescence (pl) measurements. tem evidences that self-organized qds were formed with a smaller size and larger density than that on normal gaas buffer layers. it is discussed that local tensile surface strain regions that are preferred sites for inas islands nucleation are increased in the case of the lt-gaas buffer layers due to exhibiting as precipitates. the pl spectra show a blue-shifted peak energy with narrower linewidth revealing the improvement of optical properties of the qds grown on lt-gaas epi-layers. it suggests us a new way to improve the uniformity and change the energy band structure of the inas self-organized qds by carefully controlling the surface stress states of the lt-gaas buffers on which the qds are formed. (c) 2000 elsevier science b.v. all rights reserved. |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; ISLANDS ; GROWTH ; SURFACES |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000089575200011 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428892 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang, XD |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, XD,Niu, ZC,Wang, H,et al. Formation of inas quantum dots on low-temperature gaas epi-layer[J]. Journal of crystal growth,2000,218(2-4):209-213. |
| APA | Wang, XD,Niu, ZC,Wang, H,&Feng, SL.(2000).Formation of inas quantum dots on low-temperature gaas epi-layer.Journal of crystal growth,218(2-4),209-213. |
| MLA | Wang, XD,et al."Formation of inas quantum dots on low-temperature gaas epi-layer".Journal of crystal growth 218.2-4(2000):209-213. |
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来源：半导体研究所
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