Study of rapid carrier capture and relaxation in inas/gaas heterostructures
文献类型：期刊论文
| 作者 | Li, Q; Xu, ZY; Ge, WK |
| 刊名 | Journal of infrared and millimeter waves
 |
| 出版日期 | 2000-10-01 |
| 卷号 | 19期号:5页码:343-346 |
| 关键词 | Ultrafast spectroscopy Low-dimension heterostructure Iii-v semiconductors |
| ISSN号 | 1001-9014 |
| 通讯作者 | Li, q() |
| 英文摘要 | The rapid carrier capture and relaxation processes in inas/gaas quantum dots were studied at 77k by using a simple degenerate pump-probe technique. a rising process was observed in the transient reflectivity, following the initial fast relaxation associated with gaas bulk matrix, and this rising process was assigned to be related to the carrier capture from the gaas barriers to inas layers. the assignment was modeled using kramers-kronig relation. by analyzing the rising process observed in the transient reflectivity, the carrier capture time constants were obtained. the measured capture times decrease with the increase of carrier concentration. |
| WOS关键词 | QUANTUM DOTS ; ELECTRON RELAXATION ; GAAS |
| WOS研究方向 | Optics |
| WOS类目 | Optics |
| 语种 | 英语 |
| WOS记录号 | WOS:000090112400005 |
| 出版者 | SCIENCE PRESS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428894 |
| 专题 | 半导体研究所 |
| 通讯作者 | Li, Q |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 2.Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, Q,Xu, ZY,Ge, WK. Study of rapid carrier capture and relaxation in inas/gaas heterostructures[J]. Journal of infrared and millimeter waves,2000,19(5):343-346. |
| APA | Li, Q,Xu, ZY,&Ge, WK.(2000).Study of rapid carrier capture and relaxation in inas/gaas heterostructures.Journal of infrared and millimeter waves,19(5),343-346. |
| MLA | Li, Q,et al."Study of rapid carrier capture and relaxation in inas/gaas heterostructures".Journal of infrared and millimeter waves 19.5(2000):343-346. |
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来源：半导体研究所
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