Relaxed gexsi1-x layer formation with reduced dislocation density grown by ultrahigh vacuum chemical vapor deposition
文献类型：期刊论文
| 作者 | Luo, GL; Chen, PY; Lin, XF; Tsien, P; Fan, TW |
| 刊名 | Applied physics a-materials science & processing
 |
| 出版日期 | 2000-04-01 |
| 卷号 | 70期号:4页码:449-451 |
| ISSN号 | 0947-8396 |
| 通讯作者 | Luo, gl() |
| 英文摘要 | A new alternative method to grow the relaxed ge0.24si0.76 layer with a reduced dislocation density by ultrahigh vacuum chemical vapor deposition is reported in this paper. a 1000-angstrom ge0.24si0.76 layer was first grown on a si(100) substrate. then a 500-angstrom si layer and a subsequent 5000-angstrom ge0.24si0.76 overlayer followed. all these three layers were grown at 600 degrees c. after being removed from the growth system to air, the sample was first annealed at 850 degrees c for 30 min, and then was investigated by cross-sectional transmission electron microscopy and rutherford backscattering spectroscopy. it is shown that the 5000-angstrom ge0.24si0.76 thick over layer is perfect, and most of the threading dislocations are located in the embedded thin si layer and the lower 1000-angstrom ge0.24si0.76 layer. the relaxation ratio of the over layer is deduced to be 0.8 from raman spectroscopy. |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; HIGH-ELECTRON-MOBILITY ; BUFFER LAYER ; SI/SIGE HETEROSTRUCTURES ; SI ; TEMPERATURE ; SILANE ; FILMS |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000086648400016 |
| 出版者 | SPRINGER VERLAG |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428899 |
| 专题 | 半导体研究所 |
| 通讯作者 | Luo, GL |
| 作者单位 | 1.Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Luo, GL,Chen, PY,Lin, XF,et al. Relaxed gexsi1-x layer formation with reduced dislocation density grown by ultrahigh vacuum chemical vapor deposition[J]. Applied physics a-materials science & processing,2000,70(4):449-451. |
| APA | Luo, GL,Chen, PY,Lin, XF,Tsien, P,&Fan, TW.(2000).Relaxed gexsi1-x layer formation with reduced dislocation density grown by ultrahigh vacuum chemical vapor deposition.Applied physics a-materials science & processing,70(4),449-451. |
| MLA | Luo, GL,et al."Relaxed gexsi1-x layer formation with reduced dislocation density grown by ultrahigh vacuum chemical vapor deposition".Applied physics a-materials science & processing 70.4(2000):449-451. |
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来源：半导体研究所
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