中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Modeling and optimization of semiconductor manufacturing process with neural networks

文献类型:期刊论文

作者Wang, SJ; Chen, YM; Wang, XD; Li, ZZ; Shi, LC
刊名Chinese journal of electronics
出版日期2000
卷号9期号:1页码:1-5
关键词Feedforward neural networks Optimization Radial basis function Semiconductor manufacturing
ISSN号1022-4653
通讯作者Wang, sj()
英文摘要A neural network-based process model is proposed to optimize the semiconductor manufacturing process. being different from some works in several research groups which developed neural network-based models to predict process quality with a set of process variables of only single manufacturing step, we applied this model to wafer fabrication parameters control and wafer lot yield optimization. the original data are collected from a wafer fabrication line, including technological parameters and wafer test results. the wafer lot yield is taken as the optimization target. learning from historical technological records and wafer test results, the model can predict the wafer yield. to eliminate the "bad" or noisy samples from the sample set, an experimental method was used to determine the number of hidden units so that both good learning ability and prediction capability can be obtained.
WOS研究方向Engineering
WOS类目Engineering, Electrical & Electronic
语种英语
WOS记录号WOS:000087157300001
出版者TECHNOLOGY EXCHANGE LIMITED HONG KONG
URI标识http://www.irgrid.ac.cn/handle/1471x/2428912
专题半导体研究所
通讯作者Wang, SJ
作者单位Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Wang, SJ,Chen, YM,Wang, XD,et al. Modeling and optimization of semiconductor manufacturing process with neural networks[J]. Chinese journal of electronics,2000,9(1):1-5.
APA Wang, SJ,Chen, YM,Wang, XD,Li, ZZ,&Shi, LC.(2000).Modeling and optimization of semiconductor manufacturing process with neural networks.Chinese journal of electronics,9(1),1-5.
MLA Wang, SJ,et al."Modeling and optimization of semiconductor manufacturing process with neural networks".Chinese journal of electronics 9.1(2000):1-5.

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来源:半导体研究所

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