Optical transitions in cubic gan grown by metalorganic chemical vapor deposition on gaas (100) substrate
文献类型:期刊论文
作者 | Chen, Y; Li, GH; Han, HX; Wang, ZP; Xu, DP; Yang, H |
刊名 | Chinese physics letters |
出版日期 | 2000 |
卷号 | 17期号:8页码:612-614 |
ISSN号 | 0256-307X |
通讯作者 | Chen, y() |
英文摘要 | Photoluminescence measurements have been performed on cubic gan films with carrier concentration as low as 3 x 10(13) cm(-3). from the temperature and excitation intensity dependence, the emission lines at 3.268, 3.150 and 3.081 ev were assigned to the excitonic, donor-acceptor pair, and free-to-acceptor transitions, respectively additionally, we observed two additional emission lines at 2.926 and 2.821 ev, and suggested that they belong to donor-acceptor pair transitions. furthermore, from the temperature dependence of integral intensities, we confirmed that three donor-acceptor pair transitions (3.150, 2.926, and 2.821 ev) are from a common shallow donor to three different accepters. the excitonic emission at 3.216 ev has a full-width-at-half-maximum value of 41 mev at room temperature, which indicates a good optical quality of our sample. |
WOS关键词 | MOLECULAR-BEAM EPITAXY ; PHOTOLUMINESCENCE |
WOS研究方向 | Physics |
WOS类目 | Physics, Multidisciplinary |
语种 | 英语 |
出版者 | ALLERTON PRESS INC |
WOS记录号 | WOS:000088961900024 |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428916 |
专题 | 半导体研究所 |
通讯作者 | Chen, Y |
作者单位 | 1.Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, NAtl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Chen, Y,Li, GH,Han, HX,et al. Optical transitions in cubic gan grown by metalorganic chemical vapor deposition on gaas (100) substrate[J]. Chinese physics letters,2000,17(8):612-614. |
APA | Chen, Y,Li, GH,Han, HX,Wang, ZP,Xu, DP,&Yang, H.(2000).Optical transitions in cubic gan grown by metalorganic chemical vapor deposition on gaas (100) substrate.Chinese physics letters,17(8),612-614. |
MLA | Chen, Y,et al."Optical transitions in cubic gan grown by metalorganic chemical vapor deposition on gaas (100) substrate".Chinese physics letters 17.8(2000):612-614. |
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来源:半导体研究所
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