中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Optical transitions in cubic gan grown by metalorganic chemical vapor deposition on gaas (100) substrate

文献类型:期刊论文

作者Chen, Y; Li, GH; Han, HX; Wang, ZP; Xu, DP; Yang, H
刊名Chinese physics letters
出版日期2000
卷号17期号:8页码:612-614
ISSN号0256-307X
通讯作者Chen, y()
英文摘要Photoluminescence measurements have been performed on cubic gan films with carrier concentration as low as 3 x 10(13) cm(-3). from the temperature and excitation intensity dependence, the emission lines at 3.268, 3.150 and 3.081 ev were assigned to the excitonic, donor-acceptor pair, and free-to-acceptor transitions, respectively additionally, we observed two additional emission lines at 2.926 and 2.821 ev, and suggested that they belong to donor-acceptor pair transitions. furthermore, from the temperature dependence of integral intensities, we confirmed that three donor-acceptor pair transitions (3.150, 2.926, and 2.821 ev) are from a common shallow donor to three different accepters. the excitonic emission at 3.216 ev has a full-width-at-half-maximum value of 41 mev at room temperature, which indicates a good optical quality of our sample.
WOS关键词MOLECULAR-BEAM EPITAXY ; PHOTOLUMINESCENCE
WOS研究方向Physics
WOS类目Physics, Multidisciplinary
语种英语
出版者ALLERTON PRESS INC
WOS记录号WOS:000088961900024
URI标识http://www.irgrid.ac.cn/handle/1471x/2428916
专题半导体研究所
通讯作者Chen, Y
作者单位1.Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Inst Semicond, NAtl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Chen, Y,Li, GH,Han, HX,et al. Optical transitions in cubic gan grown by metalorganic chemical vapor deposition on gaas (100) substrate[J]. Chinese physics letters,2000,17(8):612-614.
APA Chen, Y,Li, GH,Han, HX,Wang, ZP,Xu, DP,&Yang, H.(2000).Optical transitions in cubic gan grown by metalorganic chemical vapor deposition on gaas (100) substrate.Chinese physics letters,17(8),612-614.
MLA Chen, Y,et al."Optical transitions in cubic gan grown by metalorganic chemical vapor deposition on gaas (100) substrate".Chinese physics letters 17.8(2000):612-614.

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来源:半导体研究所

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