Tuning of conduction intersublevel absorption wavelengths in (in, ga)as/gaas quantum-dot nanostructures
文献类型：期刊论文
| 作者 | Pan, D; Towe, E; Kennerly, S; Kong, MY |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2000-06-12 |
| 卷号 | 76期号:24页码:3537-3539 |
| ISSN号 | 0003-6951 |
| 通讯作者 | Pan, d() |
| 英文摘要 | We demonstrate that by increasing the amount of (in, ga)as deposit in a quantum dot layer, the intersublevel absorption wavelength for (in, ga)as/gaas quantum-dot infrared photodetectors can be blue-shifted from 15 to 10 mu m while the photoluminescence peak is red-shifted. we directly compare the measured energy spacing between intersublevels obtained from infrared absorption spectroscopy with those obtained from photoluminescence spectroscopy. we find that the intersublevel energy spacing determined from absorption measurements is much larger than that obtained from the photoluminescence measurements. (c) 2000 american institute of physics. [s0003-6951(00)04524-1]. |
| WOS关键词 | INFRARED PHOTODETECTORS ; ENERGY-LEVELS ; ISLANDS ; GROWTH ; INGAAS ; GAAS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000087557100013 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428922 |
| 专题 | 半导体研究所 |
| 通讯作者 | Pan, D |
| 作者单位 | 1.Univ Virginia, Lab Opt & Quantum Elect, Charlottesville, VA 22903 USA 2.USA, Res Lab, Adelphi, MD 20783 USA 3.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Pan, D,Towe, E,Kennerly, S,et al. Tuning of conduction intersublevel absorption wavelengths in (in, ga)as/gaas quantum-dot nanostructures[J]. Applied physics letters,2000,76(24):3537-3539. |
| APA | Pan, D,Towe, E,Kennerly, S,&Kong, MY.(2000).Tuning of conduction intersublevel absorption wavelengths in (in, ga)as/gaas quantum-dot nanostructures.Applied physics letters,76(24),3537-3539. |
| MLA | Pan, D,et al."Tuning of conduction intersublevel absorption wavelengths in (in, ga)as/gaas quantum-dot nanostructures".Applied physics letters 76.24(2000):3537-3539. |
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来源：半导体研究所
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