The structural and photoluminescence properties of self-organized quantum dots in inas/in0.53ga0.47as multilayer on inp substrate
文献类型：期刊论文
| 作者 | Sun, ZZ; Wu, J; Lin, F; Liu, FQ; Chen, YH; Ye, XL; Jiang, WH; Li, YF; Xu, B; Wang, ZG |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2000-04-01 |
| 卷号 | 212期号:1-2页码:360-363 |
| 关键词 | Self-organized quantum dots Inas/in0.53ga0.47as multilayer Inp substrate Mbe |
| ISSN号 | 0022-0248 |
| 通讯作者 | Sun, zz() |
| 英文摘要 | Self-organized inas/in0.53ga0.47as quantum dot (qd) multilayers were grown on inp substrate by molecular beam epitaxy. the structural and optical properties were characterized by using cross-sectional transmission electron microscopy (tem) and photoluminescence (pl), respectively. vertically aligned inas quantum dots multilayer on inp substrate is demonstrated for the first time. photoluminescence with a line width of similar to 26 mev was observed from the qds multilayer. (c) 2000 elsevier science b.v. all rights reserved. |
| WOS关键词 | MOLECULAR-BEAM-EPITAXY ; INAS ISLANDS ; GROWTH ; MATRIX ; GAAS |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000086678100049 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428926 |
| 专题 | 半导体研究所 |
| 通讯作者 | Sun, ZZ |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Sun, ZZ,Wu, J,Lin, F,et al. The structural and photoluminescence properties of self-organized quantum dots in inas/in0.53ga0.47as multilayer on inp substrate[J]. Journal of crystal growth,2000,212(1-2):360-363. |
| APA | Sun, ZZ.,Wu, J.,Lin, F.,Liu, FQ.,Chen, YH.,...&Wang, ZG.(2000).The structural and photoluminescence properties of self-organized quantum dots in inas/in0.53ga0.47as multilayer on inp substrate.Journal of crystal growth,212(1-2),360-363. |
| MLA | Sun, ZZ,et al."The structural and photoluminescence properties of self-organized quantum dots in inas/in0.53ga0.47as multilayer on inp substrate".Journal of crystal growth 212.1-2(2000):360-363. |
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来源：半导体研究所
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