Effect of rapid thermal annealing on ingaas/gaas quantum wells
文献类型：期刊论文
| 作者 | Zhuang, QD; Li, JM; Zeng, YP; Yoon, SF; Zheng, HQ; Kong, MY; Lin, LY |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2000-04-01 |
| 卷号 | 212期号:1-2页码:352-355 |
| 关键词 | Annealing Ingaas/gaas Quantum wells Interdiffusion Quantum dots Mbe |
| ISSN号 | 0022-0248 |
| 通讯作者 | Zhuang, qd() |
| 英文摘要 | We have studied the effect of rapid thermal annealing (rta) on highly strained ingaas/gaas quantum wells by using photoluminescence (pl) and double-crystal x-ray diffraction (dcxrd) measurements. it is found that a distinct additional pl emission peak can be observed for the annealed samples. this pl emission possesses features similar to the pl emission from ingaas/gaas quantum dots (qds) with the same indium content. it is proposed that this emission stems from qds, which were formed during the annealing process. this formation is attributed to the favorable diffusion due to the inhomogeneous strain distribution in the ingaas layer intersurface. the dcxrd measurements also confirm that the dominant relaxation is strain enhanced diffusion under the low annealing temperatures. (c) 2000 elsevier science b.v. all rights reserved. |
| WOS关键词 | DOT SUPERLATTICE |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000086678100047 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428931 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhuang, QD |
| 作者单位 | 1.Nanyang Technol Univ, Sch Elect & Elect Engn, Microelect Div, Singapore 639798, Singapore 2.Chinese Acad Sci, Inst Semicond, Novel Mat Ctr, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhuang, QD,Li, JM,Zeng, YP,et al. Effect of rapid thermal annealing on ingaas/gaas quantum wells[J]. Journal of crystal growth,2000,212(1-2):352-355. |
| APA | Zhuang, QD.,Li, JM.,Zeng, YP.,Yoon, SF.,Zheng, HQ.,...&Lin, LY.(2000).Effect of rapid thermal annealing on ingaas/gaas quantum wells.Journal of crystal growth,212(1-2),352-355. |
| MLA | Zhuang, QD,et al."Effect of rapid thermal annealing on ingaas/gaas quantum wells".Journal of crystal growth 212.1-2(2000):352-355. |
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来源：半导体研究所
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