Doping during low-temperature growth of materials for n-p-n si/sige/si heterojuction bipolar transistor by gas source molecular beam epitaxy
文献类型：期刊论文
| 作者 | Liu, JP; Huang, DD; Li, JP; Lin, YX; Sun, DZ; Kong, MY |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2000 |
| 卷号 | 208期号:1-4页码:322-326 |
| 关键词 | N-type doping P-type doping Si/sige Hbt Gsmbe |
| ISSN号 | 0022-0248 |
| 通讯作者 | Huang, dd() |
| 英文摘要 | In situ doping for growth of n-p-n si/sige/si heterojuction bipolar transistor (hbt) structural materials in si gas source molecular beam epitaxy is investigated. we studied high n-type doping kinetics in si growth using disilane and phosphine, and p-type doping in sige growth using disilane, soild-ge, and diborane with an emphasis on the effect of ge on b incorporation. based on these results, in situ growth of n-p-n si/sige/si hbt device structure is demonstrated with designed structural and carrier profiles, as verified from characterizations by x-ray diffraction, and spreading resistance profiling analysis. (c) 2000 elsevier science b.v. all rights reserved. |
| WOS关键词 | SI |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000084486400046 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428940 |
| 专题 | 半导体研究所 |
| 通讯作者 | Huang, DD |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, JP,Huang, DD,Li, JP,et al. Doping during low-temperature growth of materials for n-p-n si/sige/si heterojuction bipolar transistor by gas source molecular beam epitaxy[J]. Journal of crystal growth,2000,208(1-4):322-326. |
| APA | Liu, JP,Huang, DD,Li, JP,Lin, YX,Sun, DZ,&Kong, MY.(2000).Doping during low-temperature growth of materials for n-p-n si/sige/si heterojuction bipolar transistor by gas source molecular beam epitaxy.Journal of crystal growth,208(1-4),322-326. |
| MLA | Liu, JP,et al."Doping during low-temperature growth of materials for n-p-n si/sige/si heterojuction bipolar transistor by gas source molecular beam epitaxy".Journal of crystal growth 208.1-4(2000):322-326. |
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