Study of self-assembled inas quantum dots grown on low temperature gaas epi-layer
文献类型：期刊论文
| 作者 | Wang, XD; Wang, H; Wang, HL; Niu, ZC; Feng, SL |
| 刊名 | Journal of infrared and millimeter waves
 |
| 出版日期 | 2000-06-01 |
| 卷号 | 19期号:3页码:177-180 |
| 关键词 | Inas quantum dots Low temperature gaas As precipitates |
| ISSN号 | 1001-9014 |
| 通讯作者 | Wang, xd() |
| 英文摘要 | Inas self-organized quantum dots (qds) grown on annealed low temperature gaas (lt-gaas) epi-layer were investigated by transmission electron microscopy (tem) and photoluminescence (pl) measurement. tem showed that qds formed on annealed lt-gaas epi-layer have a smaller size and a higher density than qds formed on normal gaas buffer layer. in addition, the pl spectra analysis showed that the lt-gaas epi-layer resulted in a blue shift in peak energy, and a narrower linewidth in the pl peak. the differences were attributed to the point defects and as precipitates in annealed lt-gaas epi-layer for the point defects and as precipitates change the strain field of the surface. the results provide a method to improve the uniformity and change the energy band structure of the qds by controlling the defects in the lt-gaas epi-layer. |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; DEPENDENCE |
| WOS研究方向 | Optics |
| WOS类目 | Optics |
| 语种 | 英语 |
| WOS记录号 | WOS:000087691900004 |
| 出版者 | SCIENCE PRESS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428942 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang, XD |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, XD,Wang, H,Wang, HL,et al. Study of self-assembled inas quantum dots grown on low temperature gaas epi-layer[J]. Journal of infrared and millimeter waves,2000,19(3):177-180. |
| APA | Wang, XD,Wang, H,Wang, HL,Niu, ZC,&Feng, SL.(2000).Study of self-assembled inas quantum dots grown on low temperature gaas epi-layer.Journal of infrared and millimeter waves,19(3),177-180. |
| MLA | Wang, XD,et al."Study of self-assembled inas quantum dots grown on low temperature gaas epi-layer".Journal of infrared and millimeter waves 19.3(2000):177-180. |
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来源：半导体研究所
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