中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Effect of in-mole-fraction in ingaas overgrowth layer on self-assembled inas/gaas quantum dots

文献类型:期刊论文

作者Liu, HY; Wang, XD; Xu, B; Ding, D; Jiang, WH; Wu, J; Wang, ZG
刊名Journal of crystal growth
出版日期2000-05-01
卷号213期号:1-2页码:193-197
关键词Quantum dots Ingaas overgrowth layer Photoluminescence Molecular beam epitaxy
ISSN号0022-0248
通讯作者Liu, hy()
英文摘要We have studied the optical and structural properties of inas/gaas qds covered by inxga1-xas (0 less than or equal to x less than or equal to 0.3) layer using transmission electron microscopy, photoluminescence (pl) spectra and atomic force microscopy. we find that the strain reduces in the growth direction of inas islands covered by ingaas instead of gaas layer. significant redshift of pl peak energy and narrowing of pl linewidth are observed for the inas qds covered by 3 nm thick ingaas layer. in addition, atomic force microscopy measurements indicate that the ingaas islands will nucleate on top of inas quantum dots, when 3 nm in0.3ga0.7as overgrowth layer is deposited. this result can well explain the pl intensify degradation and linewidth increment of quantum dots with a higher in-mole-fraction ingaas layer. the energy gap change of inas qds covered by ingaas may be explained in terms of reducing strain, suppressing compositional mixing and increasing island height. (c) 2000 elsevier science b.v. all rights reserved.
WOS关键词1.3 MU-M ; ROOM-TEMPERATURE ; PHOTOLUMINESCENCE LINEWIDTH ; EMISSION ; LASERS ; ENERGY
WOS研究方向Crystallography ; Materials Science ; Physics
WOS类目Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
语种英语
WOS记录号WOS:000087091300026
出版者ELSEVIER SCIENCE BV
URI标识http://www.irgrid.ac.cn/handle/1471x/2428951
专题半导体研究所
通讯作者Liu, HY
作者单位1.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Liu, HY,Wang, XD,Xu, B,et al. Effect of in-mole-fraction in ingaas overgrowth layer on self-assembled inas/gaas quantum dots[J]. Journal of crystal growth,2000,213(1-2):193-197.
APA Liu, HY.,Wang, XD.,Xu, B.,Ding, D.,Jiang, WH.,...&Wang, ZG.(2000).Effect of in-mole-fraction in ingaas overgrowth layer on self-assembled inas/gaas quantum dots.Journal of crystal growth,213(1-2),193-197.
MLA Liu, HY,et al."Effect of in-mole-fraction in ingaas overgrowth layer on self-assembled inas/gaas quantum dots".Journal of crystal growth 213.1-2(2000):193-197.

入库方式: iSwitch采集

来源:半导体研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。