Structural characterization of cubic gan grown on gaas(001) substrates
文献类型：期刊论文
| 作者 | Zheng, XH; Qu, B; Wang, YT; Yang, H; Liang, JW; Han, JY |
| 刊名 | Chinese journal of electronics
 |
| 出版日期 | 2001-04-01 |
| 卷号 | 10期号:2页码:219-222 |
| 关键词 | Cubic gan X-ray double crystal diffraction Structural characteristics |
| ISSN号 | 1022-4653 |
| 通讯作者 | Zheng, xh() |
| 英文摘要 | Structural characteristics of cubic gan epilayers grown on gaas(001) were studied using x-ray double-crystal diffraction technique. the structure factors of cubic gan(002) and (004) components are approximately identical. however, the integrated intensities of the rocking curve for cubic (002) components are over five times as those of (004) components. the discrepancy has been interpreted in detail considering other factors. in the conventional double crystal rocking curve, the peak broadening includes such information caused by the orientation distribution (mosaicity) and the distribution of lattice spacing. these two kinds of distributions can be distinguished by the triple-axis diffraction in which an analyser crystal is placed in front of the detector. moreover, the peak broadening was analysed by reciprocal lattice construction and eward sphere. by using triple-axis diffraction of cubic (002) and (113) components, domain size and dislocation density were estimated. the fully relaxed lattice parameter of cubic gan was determined to be about 0.451 +/- 0.001nm. |
| WOS关键词 | CONTINUOUS-WAVE OPERATION ; EPITAXIAL-GROWTH ; HEXAGONAL GAN ; LASER-DIODES ; THIN-FILMS ; MBE |
| WOS研究方向 | Engineering |
| WOS类目 | Engineering, Electrical & Electronic |
| 语种 | 英语 |
| WOS记录号 | WOS:000168485300018 |
| 出版者 | TECHNOLOGY EXCHANGE LIMITED HONG KONG |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428956 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zheng, XH |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China 2.Chinese Acad Geol Sci, Inst Minerals & Resources, Beijing 100037, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zheng, XH,Qu, B,Wang, YT,et al. Structural characterization of cubic gan grown on gaas(001) substrates[J]. Chinese journal of electronics,2001,10(2):219-222. |
| APA | Zheng, XH,Qu, B,Wang, YT,Yang, H,Liang, JW,&Han, JY.(2001).Structural characterization of cubic gan grown on gaas(001) substrates.Chinese journal of electronics,10(2),219-222. |
| MLA | Zheng, XH,et al."Structural characterization of cubic gan grown on gaas(001) substrates".Chinese journal of electronics 10.2(2001):219-222. |
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来源：半导体研究所
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