Oxygen precipitation in floating-zone silicon grown in hydrogen ambience and its application
文献类型：期刊论文
| 作者 | Li, HX; Li, CB; He, YJ; Liu, GR; Chen, YS; Duan, SZ |
| 刊名 | Materials science and engineering b-solid state materials for advanced technology
 |
| 出版日期 | 2001-06-21 |
| 卷号 | 83期号:1-3页码:106-110 |
| 关键词 | Oxygen precipitates Silicon Ntd Denuded zone |
| ISSN号 | 0921-5107 |
| 通讯作者 | Li, hx() |
| 英文摘要 | Oxygen precipitates in the floating-zone silicon in hydrogen ambience [fz(h) si] and in the neutron transmutation doping (ntd) fz(h) si were investigated by infrared (ir) spectroscopy at room temperature. in the intermediate temperature range, 600-850 degreesc. the apparent activation energies of 1.4 and 1.2 ev were derived from arrhenius plots of the product of the absorbance at 1230 cm (1) and the half-peak breadth for the formation of oxygen precipitates in the fz(h) si and in the ntd fz(h) si, respectively. the high temperature stability of the oxygen precipitates was only in the ntd fz(h) si. a denuded zone was obtained by denuding annealing and precipitating annealing the ntd fz(h) si wafers. (c) 2001 elsevier science b.v. all rights reserved. |
| WOS关键词 | CRYSTALLINE SILICON ; INFRARED BAND ; ATMOSPHERE ; BEHAVIOR ; WAFERS |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Multidisciplinary ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000169321500019 |
| 出版者 | ELSEVIER SCIENCE SA |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428958 |
| 专题 | 半导体研究所 |
| 通讯作者 | Li, HX |
| 作者单位 | 1.Shandong Teachers Univ, Inst Semicond, Jinan 250014, Peoples R China 2.Univ Sci & Technol Beijing, Dept Chem Phys, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, HX,Li, CB,He, YJ,et al. Oxygen precipitation in floating-zone silicon grown in hydrogen ambience and its application[J]. Materials science and engineering b-solid state materials for advanced technology,2001,83(1-3):106-110. |
| APA | Li, HX,Li, CB,He, YJ,Liu, GR,Chen, YS,&Duan, SZ.(2001).Oxygen precipitation in floating-zone silicon grown in hydrogen ambience and its application.Materials science and engineering b-solid state materials for advanced technology,83(1-3),106-110. |
| MLA | Li, HX,et al."Oxygen precipitation in floating-zone silicon grown in hydrogen ambience and its application".Materials science and engineering b-solid state materials for advanced technology 83.1-3(2001):106-110. |
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来源：半导体研究所
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