Effects of annealing time and si cap layer thickness on the si/sige/si heterostructures thermal stability
文献类型：期刊论文
| 作者 | Gao, F; Lin, YX; Huang, DD; Li, JP; Sun, DZ; Kong, MY; Zeng, YP; Li, JM; Lin, LY |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2001-07-01 |
| 卷号 | 227页码:766-769 |
| 关键词 | Annealing Molecular beam epitaxy Germanium silicon alloys Semiconducting materials |
| ISSN号 | 0022-0248 |
| 通讯作者 | Gao, f() |
| 英文摘要 | The effects of annealing time and si cap layer thickness: on the thermal stability of the si/sige/si heterostructures deposited by disilane and solid-ge molecule beam epitaxy were investigated. it is found that in the same strain state of the sige layers the annealing time decreases with increasing si cap layer thickness. this effect is analyzed by a force-balance theory and an equation has been obtained to characterize the relation between the annealing time and the si cap layer thickness. (c) 2001 elsevier science b.v. all rights reserved. |
| WOS关键词 | STRAIN RELAXATION |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000169557600148 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428962 |
| 专题 | 半导体研究所 |
| 通讯作者 | Gao, F |
| 作者单位 | Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, Beijing 10083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Gao, F,Lin, YX,Huang, DD,et al. Effects of annealing time and si cap layer thickness on the si/sige/si heterostructures thermal stability[J]. Journal of crystal growth,2001,227:766-769. |
| APA | Gao, F.,Lin, YX.,Huang, DD.,Li, JP.,Sun, DZ.,...&Lin, LY.(2001).Effects of annealing time and si cap layer thickness on the si/sige/si heterostructures thermal stability.Journal of crystal growth,227,766-769. |
| MLA | Gao, F,et al."Effects of annealing time and si cap layer thickness on the si/sige/si heterostructures thermal stability".Journal of crystal growth 227(2001):766-769. |
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来源：半导体研究所
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