Formation of the micro-defects in floating zone silicon and its influence on photoluminescence of porous silicon
文献类型：期刊论文
| 作者 | Li, CB; Li, HX; Guo, CH; Zhang, H; Xue, CS; Diao, ZY |
| 刊名 | Rare metal materials and engineering
 |
| 出版日期 | 2001-11-01 |
| 卷号 | 30页码:564-567 |
| 关键词 | Micro-defect Hydrogen Porous silicon |
| ISSN号 | 1002-185X |
| 通讯作者 | Li, cb() |
| 英文摘要 | The formation of bulk micro-defect in floating zone silicon irradiated by neutron after annealing is discussed. there are two big transitions for the size of micro-defects with annealing. it is found that the formation of micro-defects is not going though the stage of nucleation, which has some thing to do with the dangling bond near nuclei upon the passivation action of hydrogen. this passivation action will minish the interface energy per unit area and hoist largely the critical temperature of nuclei dissolution. the influence of micro-defect on the photoluminescence of porous silicon is also discussed. |
| WOS关键词 | OXYGEN PRECIPITATION |
| WOS研究方向 | Materials Science ; Metallurgy & Metallurgical Engineering |
| WOS类目 | Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:000175387800113 |
| 出版者 | NORTHWEST INST NONFERROUS METAL RESEARCH |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428972 |
| 专题 | 半导体研究所 |
| 通讯作者 | Li, CB |
| 作者单位 | Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, CB,Li, HX,Guo, CH,et al. Formation of the micro-defects in floating zone silicon and its influence on photoluminescence of porous silicon[J]. Rare metal materials and engineering,2001,30:564-567. |
| APA | Li, CB,Li, HX,Guo, CH,Zhang, H,Xue, CS,&Diao, ZY.(2001).Formation of the micro-defects in floating zone silicon and its influence on photoluminescence of porous silicon.Rare metal materials and engineering,30,564-567. |
| MLA | Li, CB,et al."Formation of the micro-defects in floating zone silicon and its influence on photoluminescence of porous silicon".Rare metal materials and engineering 30(2001):564-567. |
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来源：半导体研究所
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