Tunnel-regenerated multiple-active-region light-emitting diodes with high efficiency
文献类型：期刊论文
| 作者 | Guo, X; Shen, GD; Wang, GH; Zhu, WJ; Du, JY; Gao, G; Zou, DS; Chen, YH; Ma, XY; Chen, LH |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2001-10-29 |
| 卷号 | 79期号:18页码:2985-2986 |
| ISSN号 | 0003-6951 |
| 通讯作者 | Guo, x() |
| 英文摘要 | Tunnel-regenerated multiple-active-region (trmar) light-emitting diodes (leds) with high quantum efficiency and high brightness have been proposed and fabricated. we have proved experimentally that the efficiency of the electrical luminescence and the on-axis luminous intensity of such trmar leds scaled linearly approximately with the number of the active regions. the on-axis luminous intensity of such trmar leds with only 3 mum gap current spreading layer have exceeded 5 cd at 20 ma dc operation under 15 degrees package. the high-quantum-efficiency and high-brightness leds under the low injection level were realized. (c) 2001 american institute of physics. |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000171726300041 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428975 |
| 专题 | 半导体研究所 |
| 通讯作者 | Guo, X |
| 作者单位 | 1.Beijing Polytech Univ, Inst Informat, Beijing 100022, Peoples R China 2.Beijing Optoelect Technol Lab, Beijing 100022, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Guo, X,Shen, GD,Wang, GH,et al. Tunnel-regenerated multiple-active-region light-emitting diodes with high efficiency[J]. Applied physics letters,2001,79(18):2985-2986. |
| APA | Guo, X.,Shen, GD.,Wang, GH.,Zhu, WJ.,Du, JY.,...&Chen, LH.(2001).Tunnel-regenerated multiple-active-region light-emitting diodes with high efficiency.Applied physics letters,79(18),2985-2986. |
| MLA | Guo, X,et al."Tunnel-regenerated multiple-active-region light-emitting diodes with high efficiency".Applied physics letters 79.18(2001):2985-2986. |
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来源：半导体研究所
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