Electroluminescence from au/(sio2/si/sio2) nanometer double barrier/p-si structures and its mechanism
文献类型：期刊论文
| 作者 | Qin, GG; Chen, Y; Ran, GZ; Zhang, BR; Wang, SH; Qin, G; Ma, ZC; Zong, WH; Ren, SF |
| 刊名 | Journal of physics-condensed matter
 |
| 出版日期 | 2001-12-17 |
| 卷号 | 13期号:50页码:11751-11761 |
| ISSN号 | 0953-8984 |
| 通讯作者 | Qin, gg() |
| 英文摘要 | Sio2/si/sio2 nanometer double barriers (sssndb) with si layers of twenty-seven different thicknesses in a range of 1-5 nm with an interval of 0.2 nm have been deposited on p-si substrates using two-target alternative magnetron sputtering. electroluminescence (el) from the semitransparent au film/sssndb/p-si diodes and from a control diode without any si layer have been observed under forward bias. each el spectrum of all these diodes can be fitted by two gaussian bands with peak energies of 1.82 and 2.25 ev, and full widths at half maximum of 0.38 and 0.69 ev, respectively. it is found that the current, el peak wavelength and intensities of the two gaussian bands of the au/sssndb/p-si structure oscillate synchronously with increasing si layer thickness with a period corresponding to half a de broglie wavelength of the carriers. the experimental results strongly indicate that the el originates mainly from two types of luminescence centres with energies of 1.82 and 2.25 ev in the sio2 barriers, rather than from the nanometer si well in the sssndb. the el mechanism is discussed in detail. |
| WOS关键词 | P-SI ; PHOTOLUMINESCENCE |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000173436600039 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428980 |
| 专题 | 半导体研究所 |
| 通讯作者 | Qin, GG |
| 作者单位 | 1.Peking Univ, Dept Phys, Beijing 100871, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.Nanjing Univ, Dept Phys, Nanjing 210008, Peoples R China 4.HSRI, Natl Key Lab, ASIC, Shijiazhuang 050051, Peoples R China 5.Illinois State Univ, Dept Phys, Normal, IL 61790 USA |
| 推荐引用方式 GB/T 7714 | Qin, GG,Chen, Y,Ran, GZ,et al. Electroluminescence from au/(sio2/si/sio2) nanometer double barrier/p-si structures and its mechanism[J]. Journal of physics-condensed matter,2001,13(50):11751-11761. |
| APA | Qin, GG.,Chen, Y.,Ran, GZ.,Zhang, BR.,Wang, SH.,...&Ren, SF.(2001).Electroluminescence from au/(sio2/si/sio2) nanometer double barrier/p-si structures and its mechanism.Journal of physics-condensed matter,13(50),11751-11761. |
| MLA | Qin, GG,et al."Electroluminescence from au/(sio2/si/sio2) nanometer double barrier/p-si structures and its mechanism".Journal of physics-condensed matter 13.50(2001):11751-11761. |
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来源：半导体研究所
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