Photoluminescence of rapid-thermal annealed mg-doped gan films
文献类型：期刊论文
| 作者 | Wang, LS; Fong, WK; Surya, C; Cheah, KW; Zheng, WH; Wang, ZG |
| 刊名 | Solid-state electronics
 |
| 出版日期 | 2001-07-01 |
| 卷号 | 45期号:7页码:1153-1157 |
| 关键词 | P-type gan Metalorganic chemical vapor deposition Photoluminescence X-ray diffraction Rapid-thermal annealing |
| ISSN号 | 0038-1101 |
| 通讯作者 | Surya, c() |
| 英文摘要 | We report the investigation of temperature and excitation power dependence in photoluminescence spectroscopy measured in mg-doped gan epitaxial layers grown on sapphire by metalorganic chemical vapor deposition, the objective is to examine the effects of rapid-thermal annealing on mg-related emissions. it is observed that the peak position of the 2.7-2.8 ev emission line is a function of the device temperature and annealing conditions, the phenomenon is attributed to coulomb-potential fluctuations in the conduction and valence band edge and impurity levels due to the mg-related complex dissociation. the blue shift of the 2.7-2.8 ev emission line with increasing excitation power provides clear evidence that a donor-acceptor recombination process underlies the observed emission spectrum. in addition, quenching of minor peaks at 3.2 and 3.3 ev are observed and their possible origin is discussed. (c) 2001 elsevier science ltd. all rights reserved. |
| WOS关键词 | P-TYPE GAN ; RECOMBINATION ; EMISSION ; ENERGY ; BANDS |
| WOS研究方向 | Engineering ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000170893100016 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428986 |
| 专题 | 半导体研究所 |
| 通讯作者 | Surya, C |
| 作者单位 | 1.Hong Kong Polytech Univ, Dept Elect & Informat Engn, Kowloon, Hong Kong, Peoples R China 2.Hong Kong Baptist Univ, Dept Phys, Hong Kong, Hong Kong, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, LS,Fong, WK,Surya, C,et al. Photoluminescence of rapid-thermal annealed mg-doped gan films[J]. Solid-state electronics,2001,45(7):1153-1157. |
| APA | Wang, LS,Fong, WK,Surya, C,Cheah, KW,Zheng, WH,&Wang, ZG.(2001).Photoluminescence of rapid-thermal annealed mg-doped gan films.Solid-state electronics,45(7),1153-1157. |
| MLA | Wang, LS,et al."Photoluminescence of rapid-thermal annealed mg-doped gan films".Solid-state electronics 45.7(2001):1153-1157. |
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来源：半导体研究所
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