The pl "violet shift" of cerium dioxide on silicon
文献类型：期刊论文
| 作者 | Chai, CL; Yang, SY; Liu, ZK; Liao, MY; Chen, NF; Wang, ZG |
| 刊名 | Chinese science bulletin
 |
| 出版日期 | 2001-12-01 |
| 卷号 | 46期号:24页码:2046-2048 |
| 关键词 | Cerium dioxide thin film Pl violet shift |
| ISSN号 | 1001-6538 |
| 通讯作者 | Chai, cl() |
| 英文摘要 | Ceo2 thin film was fabricated by dual ion beam epitaxial technique. the phenomenon of pl violet shift at room temperature was observed, and the distance of shift was about 65 nm. after the analysis of crystal structure and valence in the compound were carried out by xrd and xps technique, it was concluded that the pl shift was related with valence of cerium ion in the oxides. when the valence of cerium ion varied front tetravalence to trivalence, the pl peak position would move from blue region to violet region and the phenomenon of "violet shift" was observed. |
| WOS关键词 | THIN-FILMS ; DEPOSITION ; CEO2 ; INTERFACE ; OXIDES ; GROWTH |
| WOS研究方向 | Science & Technology - Other Topics |
| WOS类目 | Multidisciplinary Sciences |
| 语种 | 英语 |
| WOS记录号 | WOS:000173323300006 |
| 出版者 | SCIENCE CHINA PRESS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429000 |
| 专题 | 半导体研究所 |
| 通讯作者 | Chai, CL |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Chai, CL,Yang, SY,Liu, ZK,et al. The pl "violet shift" of cerium dioxide on silicon[J]. Chinese science bulletin,2001,46(24):2046-2048. |
| APA | Chai, CL,Yang, SY,Liu, ZK,Liao, MY,Chen, NF,&Wang, ZG.(2001).The pl "violet shift" of cerium dioxide on silicon.Chinese science bulletin,46(24),2046-2048. |
| MLA | Chai, CL,et al."The pl "violet shift" of cerium dioxide on silicon".Chinese science bulletin 46.24(2001):2046-2048. |
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来源：半导体研究所
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