Effect of in situ thermal treatment during growth on crystal quality of gan epilayer grown on sapphire substrate by movpe
文献类型：期刊论文
| 作者 | Xu, HZ; Takahashi, K; Wang, CX; Wang, ZG; Okada, Y; Kawabe, M; Harrison, I; Foxon, CT |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2001 |
| 卷号 | 222期号:1-2页码:110-117 |
| 关键词 | Gallium nitride Metalorganic vapor-phase epitaxy (movpe) annealing Crystal quality |
| ISSN号 | 0022-0248 |
| 通讯作者 | Xu, hz() |
| 英文摘要 | Gan epilayers on sapphire substrate grown by metalorganic vapor-phase epitaxy (movpe) in a horizontal-type low-pressure two-channel reactor were investigated. samples were characterized by x-ray diffraction (xrd), raman scattering, atomic force microscopy (afm) and photoluminescence (pl) measurements. the influence of the temperature changes between low temperature (lt) deposited gan buffer and high temperature (wt) grown gan epilayer on crystal quality of epilayer was extensively studied. the effect of in situ thermal annealing during the growth on improving the gan layer crystal quality was demonstrated and the possible mechanism involved in such a growth process was discussed. (c) 2001 elsevier science b.v. all rights reserved. |
| WOS关键词 | CHEMICAL-VAPOR-DEPOSITION ; MOLECULAR-BEAM EPITAXY ; BUFFER LAYER ; PHASE EPITAXY ; DEPENDENCE ; DEFECTS |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000166502600016 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429013 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xu, HZ |
| 作者单位 | 1.Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan 2.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England 4.Univ Nottingham, Sch Elect & Elect Engn, Nottingham NG7 2RD, England |
| 推荐引用方式 GB/T 7714 | Xu, HZ,Takahashi, K,Wang, CX,et al. Effect of in situ thermal treatment during growth on crystal quality of gan epilayer grown on sapphire substrate by movpe[J]. Journal of crystal growth,2001,222(1-2):110-117. |
| APA | Xu, HZ.,Takahashi, K.,Wang, CX.,Wang, ZG.,Okada, Y.,...&Foxon, CT.(2001).Effect of in situ thermal treatment during growth on crystal quality of gan epilayer grown on sapphire substrate by movpe.Journal of crystal growth,222(1-2),110-117. |
| MLA | Xu, HZ,et al."Effect of in situ thermal treatment during growth on crystal quality of gan epilayer grown on sapphire substrate by movpe".Journal of crystal growth 222.1-2(2001):110-117. |
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来源：半导体研究所
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