Thermal redistribution of localized excitons and its effect on the luminescence band in ingan ternary alloys
文献类型:期刊论文
作者 | Li, Q; Xu, SJ; Cheng, WC; Xie, MH; Tong, SY; Che, CM; Yang, H |
刊名 | Applied physics letters
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出版日期 | 2001-09-17 |
卷号 | 79期号:12页码:1810-1812 |
ISSN号 | 0003-6951 |
通讯作者 | Xu, sj() |
英文摘要 | Temperature-dependent photoluminescence measurements have been carried out in zinc-blende ingan epilayers grown on gaas substrates by metalorganic vapor-phase epitaxy. an anomalous temperature dependence of the peak position of the luminescence band was observed. considering thermal activation and the transfer of excitons localized at different potential minima, we employed a model to explain the observed behavior. a good agreement between the theory and the experiment is achieved. at high temperatures, the model can be approximated to the band-tail-state emission model proposed by eliseev et al. [appl. phys. lett. 71, 569 (1997)]. (c) 2001 american institute of physics. |
WOS关键词 | QUANTUM DOTS ; TEMPERATURE ; PHOTOLUMINESCENCE ; ACTIVATION ; DIODES |
WOS研究方向 | Physics |
WOS类目 | Physics, Applied |
语种 | 英语 |
WOS记录号 | WOS:000171014800023 |
出版者 | AMER INST PHYSICS |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429014 |
专题 | 半导体研究所 |
通讯作者 | Xu, SJ |
作者单位 | 1.Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China 2.Univ Hong Kong, Dept Chem, Hong Kong, Hong Kong, Peoples R China 3.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Li, Q,Xu, SJ,Cheng, WC,et al. Thermal redistribution of localized excitons and its effect on the luminescence band in ingan ternary alloys[J]. Applied physics letters,2001,79(12):1810-1812. |
APA | Li, Q.,Xu, SJ.,Cheng, WC.,Xie, MH.,Tong, SY.,...&Yang, H.(2001).Thermal redistribution of localized excitons and its effect on the luminescence band in ingan ternary alloys.Applied physics letters,79(12),1810-1812. |
MLA | Li, Q,et al."Thermal redistribution of localized excitons and its effect on the luminescence band in ingan ternary alloys".Applied physics letters 79.12(2001):1810-1812. |
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来源:半导体研究所
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