Growth of sige heterojunction bipolar transistor using si2h6 gas and ge solid sources molecular beam epitaxy
文献类型：期刊论文
| 作者 | Gao, F; Huang, DD; Li, JP; Kong, MY; Sun, DZ; Li, JM; Zeng, YP; Lin, LY |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2001-03-01 |
| 卷号 | 223期号:4页码:489-493 |
| 关键词 | Molecular beam epitaxy Semiconducting gegermanium Semiconducting silicon Bipolar transistors Heterojunction semiconductor devices |
| ISSN号 | 0022-0248 |
| 通讯作者 | Gao, f() |
| 英文摘要 | N-p-n si/sige/si heterostructure has been grown by a disilane (si2h6) gas and ge solid sources molecular beam epitaxy system using phosphine (ph3) and diborane (b2h6) as n- and p-type in situ doping sources, respectively. x-ray diffraction (xrd) and secondary ion mass spectroscopy (sims) measurements show that the grown heterostructure has a good quality, the boron doping is confined to the sige base layer, and the ge has a trapezoidal profile. postgrowth p implantation was performed to prepare a good ohmic contact to the emitter. heterojunction bipolar transistor (hbt) has been fabricated using the grown heterostructure and a common-emitter current gain of 75 and a cut-off frequency of 20 ghz at 300 k have been obtained. (c) 2001 elsevier science b.v. all rights reserved. |
| WOS关键词 | POWER |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000167740900007 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429015 |
| 专题 | 半导体研究所 |
| 通讯作者 | Gao, F |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Gao, F,Huang, DD,Li, JP,et al. Growth of sige heterojunction bipolar transistor using si2h6 gas and ge solid sources molecular beam epitaxy[J]. Journal of crystal growth,2001,223(4):489-493. |
| APA | Gao, F.,Huang, DD.,Li, JP.,Kong, MY.,Sun, DZ.,...&Lin, LY.(2001).Growth of sige heterojunction bipolar transistor using si2h6 gas and ge solid sources molecular beam epitaxy.Journal of crystal growth,223(4),489-493. |
| MLA | Gao, F,et al."Growth of sige heterojunction bipolar transistor using si2h6 gas and ge solid sources molecular beam epitaxy".Journal of crystal growth 223.4(2001):489-493. |
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来源：半导体研究所
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