Competition between band gap and yellow luminescence in undoped gan grown by movpe on sapphire substrate
文献类型：期刊论文
| 作者 | Xu, HZ; Bell, A; Wang, ZG; Okada, Y; Kawabe, M; Harrison, I; Foxon, CT |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2001 |
| 卷号 | 222期号:1-2页码:96-103 |
| 关键词 | Gallium nitride Metalorganic vapor-phase epitaxy Photoluminescence Yellow luminescence |
| ISSN号 | 0022-0248 |
| 通讯作者 | Xu, hz() |
| 英文摘要 | Undoped gan epilayer on c-face (0 0 0 1) sapphire substrate has been grown by metalorganic vapor-phase epitaxy (movpe) in a horizontal-type low-pressure two-channel reactor. photoluminescence (pl) as a function of temperature and excitation intensity have been systematically studied, and the competition between near band gap ultraviolet (uv) and defect-related yellow luminescence (yl) has been extensively investigated, it is revealed that the ratio of the uv-to-yl peak intensities depends strongly on the excitation intensity and the measurement temperature. the obtained results have been analyzed in comparison with the theoretical predications based on a bimolecular model. (c) 2001 elsevier science b.v. all rights reserved. |
| WOS关键词 | N-TYPE GAN ; PERSISTENT PHOTOCONDUCTIVITY ; THIN-FILMS ; DOPED GAN ; DEEP LEVELS ; ORIGIN ; PHOTOLUMINESCENCE ; DEPENDENCE ; VACANCIES ; EPITAXY |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000166502600014 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429016 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xu, HZ |
| 作者单位 | 1.Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan 2.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England 4.Univ Nottingham, Sch Elect & Elect Engn, Nottingham NG7 2RD, England |
| 推荐引用方式 GB/T 7714 | Xu, HZ,Bell, A,Wang, ZG,et al. Competition between band gap and yellow luminescence in undoped gan grown by movpe on sapphire substrate[J]. Journal of crystal growth,2001,222(1-2):96-103. |
| APA | Xu, HZ.,Bell, A.,Wang, ZG.,Okada, Y.,Kawabe, M.,...&Foxon, CT.(2001).Competition between band gap and yellow luminescence in undoped gan grown by movpe on sapphire substrate.Journal of crystal growth,222(1-2),96-103. |
| MLA | Xu, HZ,et al."Competition between band gap and yellow luminescence in undoped gan grown by movpe on sapphire substrate".Journal of crystal growth 222.1-2(2001):96-103. |
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来源：半导体研究所
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