Photoluminescence properties of porous silicon based on fz(h) si wafer
文献类型：期刊论文
| 作者 | He, YJ; Li, HX; Guo, CH; Liu, GR; Chen, YS; Duan, SZ |
| 刊名 | Rare metals
 |
| 出版日期 | 2001-03-01 |
| 卷号 | 20期号:1页码:38-+ |
| 关键词 | Porous silicon Photoluminescence Surface modification Rapid thermal oxidation |
| ISSN号 | 1001-0521 |
| 通讯作者 | He, yj() |
| 英文摘要 | The photoluminescence (pl) properties of porous silicon (ps) have been studied based on n-type single-crystal (111) silicon wafers (80-90 omega .cm in the resistivity). the porous silicon layers (psl) were created by anodizing the wafers with a denuded zone of 20-40 mum formed by neutron transmutation doping (ntd) and thermal treatment at 940 degreesc for 4 h and then 700 degreesc for 2 h, two-step heating of the floating-zone silicon (fz si) grown in a hydrogen (h,) ambience. by surface modification with stannic chloride or amine immersion and rapid thermal oxidation (rto), the pl peak position from the ps can be qualitatively controlled factitiously. the as-prepared ps shows an orange-yellow luminescence, while the modified samples emit red, green and blue luminescence. mechanisms for the different colors of the pl are discussed. fourier transform infrared (ftir) is carried out to analyze the differences in the structural configuration of the ps samples. |
| WOS关键词 | OXYGEN PRECIPITATION ; LUMINESCENCE PROPERTIES ; DEPOSITION |
| WOS研究方向 | Materials Science ; Metallurgy & Metallurgical Engineering |
| WOS类目 | Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:000168684200008 |
| 出版者 | NONFERROUS METALS SOCIETY CHINA |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429017 |
| 专题 | 半导体研究所 |
| 通讯作者 | He, YJ |
| 作者单位 | 1.Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China 2.Univ Sci & Technol Beijing, Met Sch, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | He, YJ,Li, HX,Guo, CH,et al. Photoluminescence properties of porous silicon based on fz(h) si wafer[J]. Rare metals,2001,20(1):38-+. |
| APA | He, YJ,Li, HX,Guo, CH,Liu, GR,Chen, YS,&Duan, SZ.(2001).Photoluminescence properties of porous silicon based on fz(h) si wafer.Rare metals,20(1),38-+. |
| MLA | He, YJ,et al."Photoluminescence properties of porous silicon based on fz(h) si wafer".Rare metals 20.1(2001):38-+. |
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来源：半导体研究所
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